The IR2111(S) is a high voltage, high speed power MOSFET and IGBT driver with dependent high and low side referenced output channels designed for half-bridge applications.
The document describes the IR2111(S) as a high voltage, high speed power MOSFET and IGBT driver with dependent high and low side referenced output channels designed for half-bridge applications. It features proprietary HVIC and latch immune CMOS technologies enabling ruggedized monolithic construction.
| Max. Output Offset Voltage (Voffset) | 600 V |
|---|---|
| Output Current (High/Low Side) | -200 mA / 420 mA |
| Gate Drive Supply Range | 10 - 20 V |
| Turn-on/Off Delay Time (Typ.) | 750 & 150 ns |
| Deadtime (Typ.) | 650 ns |
The absolute maximum rating for the high side floating supply voltage is 625 V.
The device should operate with a low side and logic fixed supply between 10 V and 20 V.
The typical turn-on propagation delay is 750 ns when Vs = 0V.