Industrial

FDMA510PZ is a single P-channel PowerTrench® MOSFET with a maximum drain-source voltage of –20V, a maximum drain-source current of –7.8A and a maximum on-state resistance of 30mΩ. It features low power consumption, high withstand voltage, high switching speed and is suitable for battery charging or load switching applications.

The FDMA520PZ is a single P-Channel PowerTrench® MOSFET with low on-state resistance and is ideal for battery charging or load switching applications.

This document describes the features and characteristics of the FDMA530PZ Single P-Channel PowerTrench® MOSFET, released in June 2011. This product is designed for battery charge or load switching in ultraportable applications. It features a MOSFET with low on-state resistance and exceptional thermal performance.

FDMA6023PZT is a dual P-Channel PowerTrench® MOSFET with a working voltage of -20V and a maximum on-state resistance of 60 mΩ. It is suitable for applications such as battery charge switch, battery management, and load switch.

This is a document about FDMA7628 Single N-Channel 1.5V Specified PowerTrench® MOSFET. The product features a maximum rDS(on) of 14.5 mΩ, a maximum voltage of 20V, a maximum current of 9.4A, and a maximum power dissipation of 1.9W. It is designed with a low profile of 2x2mm and is RoHS compliant.

FDMA7630 is a single N-channel PowerTrench® MOSFET from Fairchild Semiconductor Corporation. It features a maximum voltage of 30V, a maximum current of 11A, and a maximum on-resistance of 13mΩ. The device is packaged in a MicroFET 2x2 mm package that is only 0.8mm thick and is RoHS compliant.

FDMA7632 is a N-channel power MOSFET from Fairchild Semiconductor. Its maximum drain-source voltage is 30V and maximum current is 9A. The typical on-resistance is 19mΩ at VGS = 10V, ID = 9A and 30mΩ at VGS = 4.5V, ID = 7A. The device is packaged in a new MicroFET 2x2 mm with a height of 0.8mm and is RoHS compliant.

This document describes the features and characteristics of the FDMA7670 single N-channel power MOSFET, including maximum on-resistance, low profile, etc. The product is suitable for DC-DC Buck converters.

This document describes the features and characteristics of the FDMA7672 Single N-Channel Power Trench MOSFET, including maximum on-resistance, low profile packaging, free from halogenated compounds and antimony oxides, etc.

FDMA8878 is a single N-channel high performance Power Trench MOSFET with extremely low RDS(on), fast switching speed and RoHS compliant. It is suitable for applications including DC/DC Buck converters, load switch in NB and notebook battery power management.

This document describes the features and characteristics of the FDMA8884 N-Channel Power Trench® MOSFET product released in April 2012, including maximum on-state resistance, high-performance trench technology, fast switching speed, etc.

FDMA905P is a single P-channel PowerTrench® MOSFET with a maximum RDS(on) of 16 mΩ, and is designed for use in battery charge or load switching applications in cellular handsets and other ultraportable devices.

The FDMA910PZ is a single P-Channel PowerTrench® MOSFET with a rated voltage of -20V, a maximum current of -9.4A, and a maximum on-resistance of 20mΩ.

This document describes the features and characteristics of FDMB2307NZ Dual Common Drain N-Channel PowerTrench® MOSFET, including maximum on-resistance, low profile package, HBM ESD protection, etc. This product is designed specifically for Li-Ion battery pack protection circuit and other ultra-portable applications.

FDMB3800N is a dual N-channel power MOSFET produced by Fairchild Semiconductor Corporation. It features low on-state resistance, high switching speed, low gate charge, etc.