Industrial

The FDMC8327L N-Channel PowerTrench® MOSFET is a 40 V, 14 A, 9.7 mΩ N-channel MOSFET. It features low RDS(on), low power, and high reliability, making it ideal for DC-DC conversion applications.

This document is a datasheet of FDMC8462 N-Channel Power Trench® MOSFET, including product features, maximum ratings, applications, characteristics, technical parameters, etc.

FDMC8554 N-Channel Power Trench® MOSFET is an N-Channel MOSFET produced by Fairchild Semiconductor Corporation. It features a maximum on-resistance of 5 mΩ and is packaged in a 3.3x3.3 mm MicroFET. It complies with the RoHS standard.

The FDMC8588DC is an N-Channel PowerTrench® MOSFET with features of 25V, 40A, and 5.7 mΩ. It has state-of-the-art switching performance, lower output capacitance, gate resistance, and gate charge to boost efficiency. The shielded gate technology reduces switch node ringing and increases immunity to EMI and cross conduction.

FDMC86102 N-Channel Power Trench® MOSFET is a high-performance power MOSFET with low on-state resistance and high switching speed, which can be used in DC-DC conversion circuits.

The FDMC86102L is a N-Channel Power Trench® MOSFET from Fairchild Semiconductor Corporation with a rated voltage of 100V and a rated current of 18A. This product has an ultra-low on-state resistance, a low profile and meets RoHS standards.

FDMC86102LZ N-Channel Power Trench® MOSFET is a N-Channel logic Level MOSFET produced by Fairchild Semiconductor Corporation using advanced Power Trench® process. It has excellent switching performance and high ESD protection.

FDMC86116LZ N-Channel Power Trench® MOSFET is a logic level MOSFET produced by Fairchild Semiconductor Corporation. It has a maximum RDS(on) of 103 mΩ and a maximum current of 7.5 A. It has HBM ESD protection level > 3 KV, 100% UIL testing, and RoHS compliance.

FDMC86160 N-Channel Power Trench® MOSFET is a 100V, 43A, 14mΩ MOSFET. This MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance. This device is well suited for applications where ulta low RDS （on） is required in small spaces such as High performance VRM, POL and orring functions.

The FDMC8622 is a N-channel MOSFET from Fairchild Semiconductor that has extremely low rDS(on), high power and current handling capability and is widely used in POE protection switches.

FDMC86240 N-Channel Power Trench® MOSFET is a high performance MOSFET produced by Fairchild Semiconductor. The on-state resistance is only 51 mΩ, which makes it suitable for DC-DC conversion applications.

FDMC86244 is a N-Channel Power Trench® MOSFET produced by Fairchild Semiconductor. It uses the company's advanced Power Trench® process and features low RDS(on) and superior switching performance.

FDMC86248 N-Channel Power Trench® MOSFET is a high-performance product produced by Fairchild Semiconductor with a maximum resistance of 90 mΩ. It can be used for primary MOSFET and MV synchronous rectifier MOSFET applications.

FDG8842CZ Complementary PowerTrench® MOSFET is a high performance, low voltage switch device that is ideal for low voltage applications. The device is manufactured using Fairchild's proprietary high cell density DMOS technology, which provides very low on-state resistance. This makes the device ideal for applications where low power consumption is critical.