Fairchild Semiconductor FDMC2610 200V 9.5A MOSFET Datasheet

FDMC2610 N-Channel UltraFET Trench® MOSFET is a power management MOSFET from Fairchild Semiconductor Corporation with a maximum voltage of 200V, a maximum current of 9.5A, and a maximum resistance of 200mΩ. It has a low profile and is RoHS compliant.


Fairchild Semiconductor FDMC2610 200V 9.5A MOSFET Datasheet - cover page
Brand
Fairchild
Category
Other Electronics
Document type
Datasheet
Language
English
Pages
7
File format
PDF
File size
396 KB
Published
11 July, 2012
Updated
30 September, 2023
MD5 checksum
C21DFBFA65E3B7CF6942A5AF4167C2F9

About this manual

The Fairchild Semiconductor FDMC2610 is an N-Channel UltraFET Trench MOSFET designed for power management applications, specifically DC-DC conversion. It features a rugged gate structure and a low profile of 1mm maximum height. The device is RoHS compliant and operates within a junction temperature range of -55°C to +150°C.

What's inside

  • Features
  • General Description
  • Application
  • Maximum Ratings
  • Thermal Characteristics
  • Electrical Characteristics
  • Typical Characteristics
  • Package Marking and Ordering Information
  • Package Dimensions
  • Disclaimer

Frequently asked questions

What is the maximum continuous drain current at a junction temperature of 25°C?

The maximum continuous drain current is 9.5 A when the junction temperature is 25°C.

What is the operating and storage junction temperature range?

The device operates and stores within a junction temperature range of -55 to +150 °C.

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