ON Semiconductor NTGS3443T1 Power MOSFET Datasheet

NTGS3443T1 is a 2 Amp, 20 Volt P-channel TSOP-6 Power MOSFET featuring ultra low RDS(on), higher efficiency extending battery life and miniature TSOP6 surface mount package.


ON Semiconductor NTGS3443T1 Power MOSFET Datasheet - cover page
Brand
NTGS3443T1
Category
Other Electronics
Document type
Datasheet
Language
English
Pages
6
File format
PDF
File size
55 KB
Published
11 July, 2012
Updated
30 September, 2023
MD5 checksum
31020FFA54BB6BEE466743EF3A042FE1

About this manual

This document is a datasheet for the NTGS3443T1, a P-Channel Power MOSFET designed for power management in portable and battery-powered products such as cellular phones and PCMCIA cards. The device is housed in a miniature TSOP-6 surface mount package and is available in a Pb-free version denoted by the G suffix.

The datasheet provides maximum ratings, electrical characteristics, typical electrical characteristics graphs, and package dimensions. Key specifications include a drain-to-source voltage of -20 Volts and a continuous drain current of -2.2 Amps at 25°C. It also details thermal resistance, capacitance, switching times, and soldering information.

What's inside

  • Features
  • Applications
  • Maximum Ratings
  • Electrical Characteristics
  • Typical Electrical Characteristics
  • Package Dimensions
  • Ordering Information

Specifications

Drain-to-Source Voltage-20 Volts
Gate-to-Source Voltage-12 Volts
Continuous Drain Current-2.2 Amps
Pulsed Drain Current-10 Amps
Package TypeTSOP-6
Operating Temperature Range-55 to 150 °C

Frequently asked questions

What is the maximum continuous drain current?

The maximum continuous drain current at 25°C is -2.2 Amps.

Is a Pb-free version available?

Yes, the G-suffix denotes a Pb-free lead finish.

What are the typical applications for this MOSFET?

It is used for power management in portable and battery-powered products like cellular phones and PCMCIA cards.

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