NTGS3441T1 is a power MOSFET product with ultra-low RDS(on) and higher efficiency, suitable for power management in portable and battery-powered products.
This document is a technical datasheet for the NTGS3441T1, a P-Channel Power MOSFET manufactured by ON Semiconductor. The device is designed with an ultra-low on-resistance (RDS(on)) to extend battery life and features a miniature TSOP-6 surface mount package suitable for portable and battery-powered applications such as cellular phones and PCMCIA cards.
The datasheet provides comprehensive electrical characteristics, including maximum ratings, typical performance curves, and switching parameters. It details the device's capabilities in terms of drain-to-source voltage (20V), continuous current handling, thermal resistance, and capacitance values under various operating conditions.
| Drain-to-Source Voltage (VDS) | -20 V |
|---|---|
| Gate-to-Source Voltage (Continuous) | -8.0 V |
| Operating Temperature Range | -55 to 150 °C |
| Total Gate Charge (Typical) | 14 nC |
It is intended for power management in portable and battery-powered products, including cellular phones, cordless telephones, and PCMCIA cards.
Yes, the datasheet notes that a Pb-Free Package is Available for this part.