The FDMC2674 N-Channel UltraFET Trench MOSFET is a high efficiency power conversion application device with ultra low leakage, low ESR, low total and Miller gate charge. These devices are ideal for high frequency DC to DC converters.
The document describes the Fairchild Semiconductor FDMC2674, an N-Channel UltraFET Trench MOSFET optimized for efficiency in power conversion applications such as DC/DC converters and off-line UPS systems. Key features include a maximum on-resistance of 366mΩ at Vgs=10V and low Miller charge.
The datasheet details electrical characteristics, including breakdown voltage, threshold voltage, switching times, and thermal resistance. It also provides typical performance graphs for on-resistance versus temperature and gate charge characteristics, along with package dimensions and ordering information.
| Drain to Source Voltage (Vdss) | 220 V |
|---|---|
| Pulsed Drain Current | 13.8 A |
| Power Dissipation (Ta = 25°C) | 42 W |
| Operating Junction Temperature Range | -55 to +150 °C |
The device supports a continuous drain current of 7.0 A when the case temperature is 25°C.
The maximum power dissipation is 42 W when the ambient temperature is 25°C.
The device operates and stores within a junction temperature range of -55 to +150 °C.