FDMS3500 N-Channel Power Trench® MOSFET is a high-performance MOSFET with 75V, 49A, 14.5m� characteristics, suitable for DC-DC conversion applications.
This document is a technical datasheet for the Fairchild Semiconductor FDMS3500, an N-Channel Power Trench® MOSFET. The device features a maximum drain-to-source voltage of 75V and a continuous drain current capability of up to 49A (package limited). It utilizes advanced silicon technology to minimize on-state resistance while maintaining superior switching performance.
| Drain to Source Voltage (VDS) | 75 V |
|---|---|
| Gate to Source Voltage (VGS) | ±20 V |
| Continuous Drain Current (Package limited) | 49 A |
| Operating Junction Temperature Range | -55 to +150 °C |
The maximum rDS(on) is 14.5mΩ when VGS = 10V and ID = 11.5A.
Yes, the device is RoHS Compliant.