The FDMS3606AS is a 30V asymmetric dual N-channel MOSFET with low inductance packaging, lower switching losses, and reduced circuit inductance. It is suitable for applications such as computing, communications, general purpose point of load, notebook VCORE, and server MOSFET.
The document describes the Fairchild Semiconductor FDMS3606AS PowerTrench Power Stage, which integrates two specialized N-Channel MOSFETs (Q1 and Q2) into a single dual PQFN package. The device is engineered to facilitate easy placement and routing for synchronous buck converters by internally connecting the switch node.
The datasheet provides comprehensive electrical characteristics, including maximum ratings, off/on characteristics, dynamic parameters, and switching specifications for both MOSFETs within the component. It also includes typical performance curves illustrating on-resistance behavior, gate charge, capacitance, and thermal response under various operating conditions.
The device includes two specialized N-Channel MOSFETs in a dual PQFN package.
The device operates and stores within a junction temperature range of -55 to +150 °C.