Industrial

The FDN358P is a P-Channel Logic Level MOSFET produced using Fairchild Semiconductor's advanced Power Trench process that has been specially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for portable electronics applications: load switching and power management, battery charging circuits, and DC/DC conversion.

The FDN359BN is an N-channel logic level MOSFET produced by Fairchild Semiconductor Corporation. This MOSFET uses Fairchild Semiconductor's advanced PowerTrench process, which minimizes the on-state resistance while maintaining superior switching performance. This device is well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

This document introduces the FDN360P single P-channel power MOSFET produced by Fairchild Semiconductor. This device is produced using the advanced Power Trench process, which minimizes on-state resistance and maintains low gate charge for superior switching performance. It is suitable for low voltage and battery powered applications that require low in-line power loss and fast switching.

FDN361BN is a 30V N-channel logic level PowerTrench MOSFET that has fast switching speed and low line losses. It is suitable for low voltage applications in notebook computers, portable phones, PCMCIA cards, etc.

The FDN372S is a 30V N-channel power trench SyncFET™ MOSFET designed to maximize power conversion efficiency with low Rds(on) and low gate charge. It is ideal as a low side switch in a synchronous converter.

This data sheet mainly introduces the features and characteristics of the MMSZ2V4ET1 series of diode products, including rated power, maximum power, voltage range, etc.

FDMS3668S is a dual N-channel MOSFET from Fairchild Semiconductor Corporation. It features low on-resistance and low voltage drop. It is suitable for applications such as computing, communications, general purpose point of load and notebook computers.

FDMS3672 N-Channel UltraFET Trench MOSFET, max rDS(on) is 23mΩ, max ID is 22A, typical Qg is 31nC. These devices are ideal for high frequency DC-DC converters.

FDMS3686S PowerTrench® Power Stage is a dual N-channel MOSFET that features low RDS(on), low inductance packaging and optimized layout for higher power efficiency.

The FDMS4435BZ is a P-channel MOSFET produced by Fairchild Semiconductor using its advanced Power Trench® process. It features extremely low on-state resistance and is well suited for power management and load switching applications common in notebook computers and portable battery packs.

This document is FDMS5352 N-Channel Power Trench® MOSFET's datasheet, it introduces its features and characteristics, including maximum voltage, maximum current, maximum on-state resistance, minimum on-state resistance, application scenarios, etc.

This document describes the features and characteristics of the FDMS5672 N-Channel UltraFET Trench® MOSFET, including maximum rDS(on), maximum Qg, low Miller charge, and optimized efficiency at high frequencies.

The FDMS6673BZ P-Channel PowerTrench® MOSFET is a high-performance device designed for use in load switch applications. It features an advanced package and silicon combination for low rDS(on), and an HBM ESD protection level of 8 kV typical.

This document describes the features and characteristics of the FDMS6681Z P-Channel PowerTrench® MOSFET product, released in May 2009, including maximum on-resistance, high ESD protection, etc.