FDMS3600S is a dual N-channel MOSFET device produced by Fairchild Semiconductor Corporation. It has the characteristics of low switching loss, optimized circuit layout and low switch node ringing. This device can be applied to computing, communications, general purpose point of load, notebook VCORE and server.
The FDMS3600S is an integrated PowerTrench Power Stage containing two specialized N-Channel MOSFETs in a dual PQFN package. The device features a control MOSFET (Q1) and a synchronous SyncFET (Q2), internally connected to facilitate the layout of synchronous buck converters.
Key specifications include a maximum drain-to-source voltage of 25 V for both transistors, with continuous drain currents up to 30 A for Q1 and 40 A for Q2 at 25°C. The device is RoHS compliant and operates within a junction temperature range of -55°C to +150°C.
| Drain to Source Voltage (VDS) | 25 V |
|---|---|
| Continuous Drain Current Q1 (Package limited) | 30 A |
| Continuous Drain Current Q2 (Silicon limited) | 155 A |
| Operating Junction Temperature Range | -55 to +150 °C |
The maximum continuous drain current for Q2 is 155 A when the junction temperature is 25 °C.
The device operates and stores within a junction temperature range of -55 to +150 °C.