This document describes the features and characteristics of the FDMS3572 N-Channel UltraFET Trench® MOSFET, including maximum rDS(on), Miller charge, and optimized efficiency at high frequencies.
This document is a technical datasheet for the Fairchild Semiconductor FDMS3572, an N-Channel UltraFET Trench MOSFET. The device features an 80V drain to source voltage rating and a continuous drain current of up to 22A (package limited) at 25°C. It is optimized for low on-resistance (16.5mΩ typical), low Miller gate charge, and high efficiency in power conversion applications.
| Drain to Source Voltage (Vdss) | 80 V |
|---|---|
| Continuous Drain Current (Package limited) | 22 A |
| Typical On-Resistance (Vgs=10V, Id=8.8A) | 16.5 mΩ |
| Typical Gate Charge (Qg) | 28 nC |
| Operating Junction Temperature Range | -55 to +150 °C |
The device is ideal for high frequency DC to DC converters.
Yes, the datasheet lists it as RoHS Compliant.