Industrial

The FDMS7556S N-Channel PowerTrench® SyncFETTM is a low rDS(on) and high efficiency MOSFET. It has a maximum rDS(on) of 1.2 mΩ and an efficient monolithic Schottky body diode. It is suitable for synchronous buck converters, notebooks, servers, telecom and high efficiency DC-DC switch mode power supplies.

FDMS7558S N-Channel PowerTrench®SyncFET is a low rDS(on) and high efficiency switch device, suitable for synchronous buck converters, notebooks, servers, telecom and high efficiency DC-DC switch power supplies

This document describes the features of FDMS7560S N-Channel PowerTrench® SyncFETTM, including maximum on-resistance, advanced package and silicon combination, synchronous Schottky body diode, etc.

The FDMS7572S N-Channel PowerTrench®SyncFET is a high efficiency, low power N-channel MOSFET with a maximum on-resistance of 2.9mΩ, a rated voltage of 25V, and a rated current of 49A. The device features advanced silicon and package technologies for excellent switching performance and low on-resistance.

The FDMS7578 N-Channel Power Trench® MOSFET is a 25V, 5.8 mΩ power transistor. It features advanced packaging and silicon combination for low rDS(on) and high efficiency. Additionally, it utilizes next generation enhanced body diode technology for soft recovery. The product is specifically designed to improve the overall efficiency and minimize switch node ringing of DC/DC converters using synchronous or conventional switching PWM controllers. It is optimized for low gate charge, low rDS(on), fast switching speed, and body diode reverse recovery performance.

FDMS7580 N-Channel Power Trench® MOSFET is a high-performance MOSFET with a low on-resistance (7.5mΩ at VGS=10V,ID=15A) optimized for low gate charge, fast switching speed and soft recovery.

This document describes the features and characteristics of the FDMS7600AS Dual N-Channel PowerTrench® MOSFET, including maximum resistance and maximum current.

This datasheet provides the specification information of MMSZ2V4T1 series Zener voltage regulators. The series products provide 500mW power and SOD-123 surface mount packaging. They have a wide range of reverse voltages and a compact packaging size.

FDMS7602S is a dual N-channel PowerTrench® MOSFET from Fairchild Semiconductor Corporation. It has a rated voltage of 30V and a rated current of 30A. The maximum on-resistance is 7.5mΩ.

The FDMS7606 is a dual N-Channel MOSFET with a Q1 of 30 V, 12 A, 11.4 mΩ and a Q2 of 30 V, 22 A, 11.6 mΩ. It features low on-resistance, high power efficiency, and RoHS compliance.

FDMS7608S is a dual N-channel power transistor produced by Fairchild Semiconductor Corporation. It has a maximum drain-source voltage of 30V, a maximum drain-source current of 22A, and a maximum on-resistance of 10.0mΩ.

This document introduces the features and characteristics of the MMSZ2V4ET1 series Zener Voltage Regulators, including 500 mW rating, FR-4 or FR-5 board, wide Zener reverse voltage range, optimized automatic board assembly, small package size and high density applications.

The MMSTA92 is a PNP small signal surface mount transistor, featuring epitaxial planar die construction, complementary NPN type available (MMSTA42), ideal for medium power amplification and switching, and ultra-small surface mount package.

FDMS7620S is a dual N-channel power MOSFET from Fairchild Semiconductor Corporation. It has a rated voltage of 30V and a maximum current of 10.1A.