FDMS3664S PowerTrench® Power Stage is a dual N-Channel MOSFET with low inductance packaging, excellent switching performance and energy saving characteristics.
The FDMS3664S is a PowerTrench Power Stage featuring two specialized N-Channel MOSFETs (Q1 and Q2) integrated into a single dual PQFN package. The device includes an internally connected switch node to facilitate the placement and routing of synchronous buck converters, optimizing power efficiency for control and synchronous applications.
The document provides comprehensive electrical characteristics, including maximum ratings, off-state parameters, on-resistance values at various gate voltages and temperatures, dynamic capacitance, switching times, and reverse recovery data. It also presents typical performance curves such as normalized on-resistance versus junction temperature and drain current.
| Drain to Source Voltage (VDS) | 30 V |
|---|---|
| Gate to Source Voltage (VGS) | +20 / +12 V |
| Continuous Drain Current (Package limited) | 30 A / 60 A |
| Continuous Drain Current (Silicon limited) | 60 A / 118 A |
| Operating and Storage Junction Temperature Range | -55 to +150 °C |
| Thermal Resistance (Junction to Case) | 2.9 / 2.3 °C/W |
The FDMS3664S is designed for use in computing, communications, general purpose point of load systems, and notebook VCORE top power.
The device includes two specialized N-Channel MOSFETs in a dual PQFN package.