Industrial

APT1201R5BVR 1200V 10A 1.500Ω TO-247 Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance.

This document is about the characteristics and technical parameters of APT1201R4, including maximum voltage, continuous current, pulsed current, leakage current, gate voltage, gate threshold voltage, etc.

APT1201R2 is a MOSFET power switch from APT company, with a breakdown voltage of 1200V and a continuous current of 12A.

APT11GF120KR is a new generation of high voltage power IGBTs using Non-Punch Through Technology. It features high voltage withstand, low forward voltage drop, large saturation gate current and fast switching characteristics, making it suitable for automotive starter, lighting, inverter, electric vehicle and other power electronic applications.

This datasheet provides the maximum ratings, characteristics/test conditions, static electrical characteristics, etc. of APT11058JFLL.

This document provides the maximum ratings, static electrical characteristics, drain-source breakdown voltage, on state drain current, drain-source on-state resistance, zero gate voltage drain current, zero gate voltage drain current, gate-source leakage current, gate threshold voltage information for APT10M30AVR.

This PDF file is the datasheet of APT10M25SVR. It provides detailed information on the static electrical characteristics, rated voltage, rated current, rated power, maximum power dissipation, linear derating factor, operating temperature range, storage temperature range, lead temperature, repetitive avalanche energy, and single pulse avalanche energy.

APT10M25BVFR is a new generation of high voltage N-Channel enhancement mode power MOSFETs. It minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.

APT10M25BVR is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.

APT10M19BVFR is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the cost of the device. This product is widely used in the field of power supplies.

APT10M19BVR is a power device from APT, with a rated voltage of 100V, a rated current of 75A, a rated resistance of 0.019Ω, a maximum current of 300A, a maximum voltage of 100V, a maximum power of 300W, a maximum temperature of 150°C and a minimum temperature of -55°C.

This document describes the maximum ratings and static electrical characteristics of the APT10M19SVR model product. The product is a high voltage N-Channel enhancement mode power MOSFET with low on-state resistance and high packing density. The document provides detailed information on the working principle, maximum voltage, maximum current, maximum power, and other characteristics of the product.

This document describes the maximum ratings, characteristics, and test conditions of the products with model numbers APT10M1LVR and APT10M11LVR. It includes parameters such as drain-source breakdown voltage, on-state drain current, drain-source on-state resistance, zero gate voltage drain current, gate-source leakage current, and gate threshold voltage.

This document is the datasheet of APT10M11JVR, which mainly introduces the maximum ratings, static electrical characteristics, dynamic electrical characteristics, and package dimensions of the product.

This document describes the maximum ratings and static electrical characteristics of the products with model numbers APT10M1B2VR and APT10M11B2VR.