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This is a APT12080LVR model product, with a maximum working voltage of 1200V, a maximum continuous current of 16A and a maximum on-resistance of 0.800 ohms.
This document is the technical data sheet of APT12067JLL, mainly introduces its electrostatic characteristics, maximum ratings, static electrical characteristics and other parameters
APT12067JFLL is a high voltage N-Channel enhancement mode power MOSFET product from APT. It has low conduction and switching losses, and both RDS(ON) and Qg are very low.
The document describes the features and characteristics of a specific model of product, including parameters such as drain-source breakdown voltage, on-state drain current, drain-source on-state resistance, zero gate voltage drain current, etc.
This document provides technical information about the APT12060 series products, including maximum ratings and static electrical characteristics. APT12060 is a power MOSFET with a rated voltage of 1200V, a rated current of 20A, and an on-state resistance of 0.600Ω.
The document describes the features and characteristics of a product named APT12057JLL, including important parameters such as drain-source breakdown voltage, on-state drain current, drain-source on-state resistance, zero gate voltage drain current, etc.
APT12057JFLL is the model of APT's ISOTOP® Power MOS 7® N-Channel enhancement mode power MOSFET, which has the advantages of low conduction loss and high switching frequency.
APT1201R6BVR is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance.
