BSP52 NPN is a bipolar transistor produced by Fairchild Semiconductor Corporation. Its maximum collector-emitter voltage is 80V, maximum collector-base voltage is 90V, maximum emitter-base voltage is 5V, maximum collector current is 800mA, and operating and storage temperature range is -55~+150°C.
This document provides the design specifications for the Fairchild BSP52 NPN Darlington Transistor, a device designed for applications requiring high current gain at collector currents up to 500mA. The transistor is sourced from process 03 and is packaged in the SOT-223 format.
| Emitter-Base Voltage | 5 V |
|---|
The BSP52 is available in the SOT-223 package.
The device supports a maximum collector-emitter voltage of 80 V and a maximum collector-base voltage of 90 V.
The transistor can handle a continuous collector current up to 800 mA.
The device operates and stores within a junction temperature range of -55 to +150 °C.