The MPSA29 is a NPN Darlington Transistor produced by Fairchild Semiconductor Corporation. It features extremely high current gain and can be used in applications with current up to 500 mA.
This document provides technical data for the MPSA29 NPN Darlington Transistor from Fairchild Semiconductor. The device is designed for applications requiring high current gain at collector currents up to 500 mA. It features a TO-92 package with specific absolute maximum ratings, including a collector-emitter voltage of 100 V and an operating temperature range of -55°C to +150°C.
| Collector-Emitter Voltage (Vces) | 100 V |
|---|---|
| Collector Current - Continuous | 800 mA |
| Operating Junction Temperature Range | -55 to +150 °C |
| Total Device Dissipation (Pp) | 625 mW |
| DC Current Gain (hFE) Min | 10,000 |
The device supports a maximum collector-emitter voltage of 100 V and a maximum collector-base voltage of 100 V.
The transistor can handle a continuous collector current up to 800 mA.
The device operates and stores within a junction temperature range of -55 to +150 °C.