The BC517 is an NPN Darlington transistor designed for applications requiring extremely high current gain up to 1.0A.
The document details the characteristics of the BC517 NPN Darlington Transistor, designed for applications requiring high current gain up to 1.0A. It lists absolute maximum ratings such as a collector-emitter voltage of 30V and a continuous collector current of 1.2A.
| Collector-Emitter Voltage (VCEO) | 30 V |
|---|---|
| Collector-Base Voltage (VCBO) | 40 V |
| Emitter-Base Voltage (VEBO) | 10 V |
| Collector Current - Continuous | 1.2 A |
| Operating and Storage Junction Temperature Range | -55 ~ 150 °C |
| DC Current Gain (hFE) | 30,000 |
| Collector-Emitter Saturation Voltage (VCE(sat)) | 1 V |
| Base-Emitter On Voltage (VBE(on)) | 1.4 V |
| Total Device Dissipation (PD) | 5.0 mW |
The device supports a continuous collector current of 1.2 A.
The operating and storage junction temperature range is from -55 to 150 °C.
The total device dissipation is 5.0 W at 25 °C.