The MMBTA13 NPN Darlington transistor is designed for applications requiring extremely high current gain at collector currents to 1.0A.
This document is a datasheet for the Fairchild Semiconductor MMBTA13, an NPN Darlington Transistor designed for applications requiring extremely high current gain at collector currents up to 1.0A. The device is sourced from process 05 and is available in the SOT-23 package.
The datasheet provides absolute maximum ratings, electrical characteristics including DC current gain and saturation voltage, thermal characteristics such as total device dissipation and thermal resistance, and mechanical dimensions for the SOT-23 package. It also includes trademark information and product status definitions.
| Collector-Emitter Voltage | 30 V |
|---|---|
| Collector-Base Voltage | 30 V |
| Emitter-Base Voltage | 10 V |
| Collector Current - Continuous | 1.2 A |
| Operating and Storage Junction Temperature Range | -55 to +150 °C |
| DC Current Gain (Io=10mA) | 5,000 |
| DC Current Gain (Ig=100mA) | 10,000 |
| Total Device Dissipation | 350 mW |
| Thermal Resistance, Junction to Ambient | 357 °C/W |
The maximum continuous collector current is 1.2 A.
The operating and storage junction temperature range is -55 to +150 °C.
The DC current gain is 5,000 when Vce is 5.0V and Io is 10mA.