This document describes the features and characteristics of the BCV27 NPN Darlington transistor, designed for applications requiring extremely high current gain with a maximum collector current of 1.0A.
This document provides the design specifications for the BCV27 NPN Darlington Transistor, a device designed for applications requiring extremely high current gain at collector currents up to 1.0 A. It lists absolute maximum ratings, electrical characteristics including cutoff and saturation voltages, and small signal parameters such as current gain and bandwidth.
The typical DC current gain is 20,000 at a collector current of 100 mA.
The device supports a continuous collector current of up to 1.2 A.
The total device dissipation is 350 mW when mounted on an FR-4 PCB.
The operating and storage junction temperature range is from -55 to +150 °C.