BSP50 is a NPN transistor produced by Fairchild Semiconductor Corporation. Its maximum collector-emitter voltage is 45V, maximum collector-base voltage is 60V, maximum emitter-base voltage is 5V, maximum collector current is 800mA and maximum operating temperature is 150 °C.
This document provides the design specifications for the Fairchild BSP50 NPN Darlington Transistor. It is designed for applications requiring extremely high current gain at collector currents up to 500mA. The datasheet includes absolute maximum ratings, electrical characteristics for both off and on states, and thermal characteristics.
| Collector-Emitter Voltage | 45 V |
|---|---|
| Collector-Base Voltage | 60 V |
| Emitter-Base Voltage | 5 V |
| Collector Current - Continuous | 800 mA |
| Operating and Storage Junction Temperature Range | - 55 ~ +150 °C |
| Total Device Dissipation | 1000 mW |
| Thermal Resistance, Junction to Ambient | 125 °C/W |
The device supports a continuous collector current of 800 mA.
The maximum collector-emitter voltage is 45 V.
The operating and storage junction temperature range is -55 to +150 °C.