This document describes the features and characteristics of 2N7052 / 2N7053 / NZT7053 NPN Darlington transistors, which are designed for applications requiring extremely high gain and high breakdown voltage.
This document provides technical specifications for the Fairchild 2N7052, 2N7053, and NZT7053 NPN Darlington Transistors. The devices are designed for applications requiring extremely high gain at collector currents up to 1.0 A and high breakdown voltage. Key electrical parameters include a collector-emitter breakdown voltage of 100 V and a DC current gain ranging from 1,000 to 20,000 depending on the specific model and operating conditions.
The transistors are available in TO-92 and SOT-223 packages.
The device supports a continuous collector current of up to 1.5 A.
The maximum collector-emitter voltage is rated at 100 V.
The operating and storage junction temperature range is from -55 to +150 °C.