The NZT605 is an NPN Darlington transistor designed for applications requiring extremely high gain, with collector currents up to 1.0A and high breakdown voltage.
The document describes the Fairchild NZT605, an NPN Darlington transistor designed for applications requiring extremely high gain at collector currents up to 1.0A and high breakdown voltage. The device is sourced from process 06 and is packaged in a SOT-223 package.
| Collector-Emitter Voltage (VCEO) | 110 V |
|---|---|
| Collector-Base Voltage (VCBO) | 140 V |
| Emitter-Base Voltage (VEBO) | 10 V |
| Collector Current (Continuous) | 1.5 A |
| Operating Junction Temperature Range | -55 to +150 °C |
| DC Current Gain (hFE) at 2.0A | 200 |
| Transition Frequency (fT) | 150 MHz |
| Total Device Dissipation (Pd) | 1,000 mW |
The device supports a continuous collector current of 1.5 A.
The maximum collector-emitter voltage is 110 V.
The maximum total device dissipation is 1,000 mW.