This document provides the absolute maximum ratings and electrical characteristics of the KSP13/14 NPN Epitaxial Silicon Darlington Transistor produced by Fairchild Semiconductor Corporation.
This document provides the design specifications for the Fairchild Semiconductor KSP13/14 NPN epitaxial silicon Darlington transistor. It lists absolute maximum ratings such as a collector-emitter voltage of 30V and a collector power dissipation of 625mW. The datasheet also includes electrical characteristics like DC current gain and current gain bandwidth product, along with typical characteristic curves.
| Collector-Emitter Voltage | 30 V |
|---|---|
| Collector Power Dissipation | 625 mW |
| Collector Current | 500 mA |
| Junction Temperature | 150 °C |
| DC Current Gain (KSP13) | 5K to 10K |
| DC Current Gain (KSP14) | 10K to 20K |
| Current Gain Bandwidth Product | 125 MHz |
The maximum junction temperature is 150 °C.
The minimum collector-emitter breakdown voltage is 30 V.