This is a document about PZTA29 NPN Darlington Transistor. The transistor is designed for applications requiring extremely high current gain at collector currents up to 500mA.
This document is a technical datasheet for the Fairchild Semiconductor PZTA29 NPN Darlington Transistor. The device is designed for applications requiring extremely high current gain at collector currents up to 500mA. It features an SOT-223 package and operates within a junction temperature range of -55°C to +150°C.
| Collector-Emitter Voltage (VocE) | 100 V |
|---|---|
| Collector Current - Continuous (Io) | 800 mA |
| Operating and Storage Junction Temperature Range | -55 to +150 °C |
| DC Current Gain (hFE) | Min. 10,000 |
| Total Device Dissipation (Pp) | 1,000 mW |
The device supports a continuous collector current of up to 800 mA.
The unit operates and stores within a junction temperature range of -55 to +150 °C.
The maximum total device dissipation is 1,000 mW.