This document introduces the absolute maximum ratings and electrical characteristics of the KST13/14 NPN epitaxial silicon transistor from Fairchild Semiconductor Corporation. It includes the maximum rated values and characteristic parameters of the transistor, such as collector-base voltage, collector-emitter voltage, emitter-base voltage, and collector current. In addition, packaging information and some typical characteristic curves of the transistor are provided.
This document provides technical specifications for the Fairchild Semiconductor KST13 and KST14 NPN epitaxial silicon Darlington amplifier transistors. The devices are housed in a SOT-23 package with pinouts for Base, Emitter, and Collector.
| Collector-Base Voltage | 30 V |
|---|---|
| Collector-Emitter Voltage | 30 V |
| Emitter-Base Voltage | 10 V |
| Collector Current | 300 mA |
| Collector Power Dissipation | 350 mW |
| Storage Temperature | 150 °C |
| DC Current Gain (KST13) | 5K to 10K |
| DC Current Gain (KST14) | 10K to 20K |
| Current Gain Bandwidth Product | 125 MHz |
The maximum collector current is 300 mA.
The maximum collector power dissipation is 350 mW.
The maximum storage temperature is 150 °C.