Industrial

The TPS202x family of power distribution switches is designed for applications where heavy capacitive loads and short circuits are likely to be encountered. These devices are 50-mΩ N-channel MOSFET high-side power switches with features such as short-circuit and thermal protection, overcurrent logic output, etc. They operate in a range of 2.7V to 5.5V and have a logic-level enable input compatible with 5V and 3V logic.

The TPS201xA family of power distribution switches is designed for applications where heavy capacitive loads and short circuits are expected. These devices are 50-mΩ N-channel MOSFET high-side power switches that can be controlled by 5V logic and 3V logic. The internal charge pump provides gate drive to control the rise and fall times of the power switch, minimizing current surges during switching. When the output load exceeds the current-limit threshold or a short circuit occurs, the TPS201xA limits the output current to a safe level and switches to constant-current mode. The switch also features short-circuit and thermal protection, which prevents excessive power dissipation and rising junction temperatures during continuous heavy overloads and short circuits.

The TPS201x family of power-distribution switches is intended for applications where heavy capacitive loads and short circuits are likely to be encountered. The high-side switch is a 95-mΩ N-channel MOSFET. Gate drive is provided by an internal driver and charge pump designed to control the power switch rise times and fall times to minimize current surges during switching. The charge pump operates at 100 kHz, requires no external components, and allows operation from supplies as low as 2.7 V. When the output load exceeds the current-limit threshold or a short circuit is present, the TPS201x limits the output current to a safe level by switching into a constant-current mode. Continuous heavy overloads...

The TPS1101 is a single, low-rDS(on), P-channel, enhancement-mode MOSFET. The device has been optimized for 3-V or 5-V power distribution in battery-powered systems by means of the Texas Instruments LinBiCMOS process. With a maximum VGS(th) of –1.5 V and an IDSS of only 0.5 µA, the TPS1101 is the ideal high-side switch for low-voltage, portable battery-management systems where maximizing battery life is a primary concern. The low rDS(on) and excellent ac characteristics (rise time 5.5 ns typical) of the TPS1101 make it the logical choice for low-voltage switching applications such as power switches for pulse-width-modulated (PWM) controllers or motor/bridge drivers. The ultrathin thin shrink small-outline package or TSSOP (PW) version fits in height-restricted places where other P-channel MOSFETs cannot. The size advantage is especially important where board height restrictions do not allow for an small-outline integrated circuit (SOIC) package. Such applications include notebook computers, personal digital assistants (PDAs), cellular telephones, and PCMCIA cards.

The file is a query page for TPS1120/TPS1120Y suppliers

The TPS1120 is a dual P-channel enhancement-mode MOSFET optimized for 3V or 5V power distribution in battery-powered systems. It features low rDS(on) of 0.18Ω at VGS = -10V, making it an ideal high-side switch for low-voltage portable battery-management systems. With a maximum VGS(th) of -1.5V and an IDSS of only 0.5µA, it helps maximize battery life. The MOSFETs have built-in circuitry for 2kV ESD protection to address electrostatic discharge (ESD) risks. The TPS1120 is commonly used in notebook computers, personal digital assistants (PDAs), cellular telephones, bar-code scanners, and PCMCIA cards.

the tps1100 is a single p-channel enhancement-mode mosfet from ti. the device has been optimized for 3v or 5v power distribution in battery-powered systems by means of ti's linbicmos process. it has low rDS(on), low voltage and high switching speed.

The document provides information about TPS1100PWLE suppliers. The product has certain features and characteristics.

TPS1100, TPS1100Y are single P-channel enhancement mode MOSFETs from Texas Instruments. The device has been optimized for 3V or 5V power distribution in battery-powered systems. The device has a maximum VGS(th) of -1.5V and an IDSS of only 0.5µA, making it the ideal high-side switch for low-voltage, portable battery-management systems where maximizing battery life is a primary concern. TPS1100 also features a low RDS(on) and excellent ac characteristics (typical rise time of 10ns), making it the logical choice for low-voltage switching applications such as power switches for pulse-width modulated (PWM) controllers or motor/bridge drivers. The TSSOP(PW) version has a small footprint and reduced height, and can be installed in places where other P-channel MOSFETs cannot. This size advantage is especially important in cases where board space is at a premium and height restrictions do not allow for a small outline integrated circuit (SOIC) package.

The TPS1100 is a single P-channel enhancement-mode MOSFET optimized for 3V or 5V power distribution in battery-powered systems. It has low rDS(on) and excellent AC characteristics, making it suitable for low-voltage switching applications.

TMS27L08 is a storage chip with high-speed read and write and low power consumption. It is suitable for various electronic devices and can store a large amount of data.