ASI Manuals - Page 5

ASI manuals, page 5

• ASI MLN1030F NPN SILICON RF POWER TRANSISTOR handbook

  The ASI MLN1030F is a NPN Silicon RF Power Transistor with Omnigold™ Metalization System, 500mA maximum current, 20V maximum collector-emitter voltage, 20OC/W thermal resistance

• ASI MLN1030S NPN SILICON RF POWER TRANSISTOR handbook

  The data sheet provides the characteristics of MLN1030S, including maximum current, maximum voltage, maximum power, etc.

• ASI HF220-28 NPN SILICON RF POWER TRANSISTOR handbook

  The ASI HF220-28 is a silicon RF power transistor featuring 12 dB PG and -30 dBc IMD3.

• ASI HF125-28 NPN SILICON RF POWER TRANSISTOR handbook

  The ASI HF125-28 is a NPN silicon RF power transistor designed for use in RF power amplifiers. It features a power gain of 15 dB at 100 W/30 MHz and an IMD3 of -30 dBc at 100 W(PEP).

• ASI HF100-28 NPN SILICON RF POWER TRANSISTOR handbook

  The ASI HF100-28 is a class A silicon NPN planar transistor designed for SSB communications. It features high linear power output and low intermodulation distortion.

• ASI HF75-28F NPN SILICON RF POWER TRANSISTOR handbook

  The ASI HF75-28F is a NPN silicon RF power transistor featuring 18 dB gain and -30 dBc IMD3.

• ASI HF30-28S NPN SILICON RF POWER TRANSISTOR handbook

  The ASI HF30-28S is a NPN Silicon RF Power Transistor with the features of PG=20dB min. at 30W/30MHz and IMD3=-30dBc max. at 30W(PEP).

• ASI HF15-28S NPN SILICON RF POWER TRANSISTOR handbook

  The ASI HF15-28S is a NPN Silicon RF Power Transistor produced by Advanced Semiconductor, Inc., it has the features of Omnigold™ Metalization System. Its maximum current is 4.0 A, the maximum collector-emitter reverse voltage is 65 V, the maximum emitter-base reverse voltage is 35 V, the maximum emitter-base voltage is 4.0 V and the maximum power dissipation is 40 W.

• ASI HF15-28F NPN SILICON RF POWER TRANSISTOR handbook

  The ASI HF15-28F is a NPN Silicon RF Power Transistor with a minimum PG of 21 dB and a maximum IMD3 of -30 dBc. It features the Omnigold™ Metalization System and has maximum ratings of 4.0 A, 65 V, 35 V and 4.0 V.

• ASI HF10-12S NPN SILICON RF POWER TRANSISTOR handbook

  ASI HF10-12S is a NPN silicon RF power transistor, featuring PG = 20 dB min. at 10 W/30 MHz, IMD3 = -30 dBc max. at 10 W(PEP), Omnigold™ Metalization System

• ASI AVF350 handbook

  ASI10573 is an NPN Silicon RF Power Transistor from Advanced Semiconductor, with a maximum current of 19.8A, a maximum voltage of 55V and a maximum power dissipation of 720W. It is packaged in 2NL FLG.

• ASI AVF400 handbook

  The document describes the features and characteristics of ASI AVF400, including input matching network and Omnigold™ metalization system.

• ASI AVF450 handbook

  This document is the datasheet of ASI AVF450. It introduces the features and characteristics of the product, including BVCBO, BVCER, BVEBO, ICES, hFE, PG, ηηC, IC, VCC, PDISS, TJ, TSTG, θθJC, PACKAGE STYLE, ORDER CODE, DIM, etc.

• ASI AVF600 handbook

  The document describes the features and characteristics of the ASI AVF600 RF power transistor, including input matching network and Omnigold™ metallization system.

• ASI CBSL1 handbook

  The document describes the features and characteristics of the ASI CBSL1 model, which is designed for UHF Class A amplifier applications in cellular base station equipment.