The ASI MLN1030F is a NPN Silicon RF Power Transistor with Omnigold™ Metalization System, 500mA maximum current, 20V maximum collector-emitter voltage, 20OC/W thermal resistance
The ASI HF125-28 is a NPN silicon RF power transistor designed for use in RF power amplifiers. It features a power gain of 15 dB at 100 W/30 MHz and an IMD3 of -30 dBc at 100 W(PEP).
The ASI HF100-28 is a class A silicon NPN planar transistor designed for SSB communications. It features high linear power output and low intermodulation distortion.
The ASI HF15-28S is a NPN Silicon RF Power Transistor produced by Advanced Semiconductor, Inc., it has the features of Omnigold™ Metalization System. Its maximum current is 4.0 A, the maximum collector-emitter reverse voltage is 65 V, the maximum emitter-base reverse voltage is 35 V, the maximum emitter-base voltage is 4.0 V and the maximum power dissipation is 40 W.
The ASI HF15-28F is a NPN Silicon RF Power Transistor with a minimum PG of 21 dB and a maximum IMD3 of -30 dBc. It features the Omnigold™ Metalization System and has maximum ratings of 4.0 A, 65 V, 35 V and 4.0 V.
ASI HF10-12S is a NPN silicon RF power transistor, featuring PG = 20 dB min. at 10 W/30 MHz, IMD3 = -30 dBc max. at 10 W(PEP), Omnigold™ Metalization System
ASI10573 is an NPN Silicon RF Power Transistor from Advanced Semiconductor, with a maximum current of 19.8A, a maximum voltage of 55V and a maximum power dissipation of 720W. It is packaged in 2NL FLG.
This document is the datasheet of ASI AVF450. It introduces the features and characteristics of the product, including BVCBO, BVCER, BVEBO, ICES, hFE, PG, ηηC, IC, VCC, PDISS, TJ, TSTG, θθJC, PACKAGE STYLE, ORDER CODE, DIM, etc.
The document describes the features and characteristics of the ASI AVF600 RF power transistor, including input matching network and Omnigold™ metallization system.
The document describes the features and characteristics of the ASI CBSL1 model, which is designed for UHF Class A amplifier applications in cellular base station equipment.
