The VFT80-28 is an N-channel enhancement mode VHF power MOSFET designed for general purpose Class B power amplifier applications up to 175 MHz. The device features PG = 10 dB typical at 175 MHz and 30:1 load VSWR capability.
VFT80-28 is a N-channel enhancement mode VHF power MOSFET, with a rated voltage of 60 V and a rated current of 10 A. Features 10:1 load VSWR capability and Omnigold™ metallization system.
The VFT300-28 is a N-channel enhancement mode silicon VHF power MOSFET designed for wideband high power VHF amplifier applications operating up to 250 MHz.
ASI UML1SL is a NPN Silicon RF Power Transistor produced by Advanced Semiconductor Inc. Its maximum current is 2.0 A, maximum collector-emitter reverse voltage is 45 V, maximum emitter-collector reverse voltage is 25 V, and maximum emitter-base reverse voltage is 3.5 V.
UML1 is a NPN silicon RF power transistor with the following features: Omnigold™ Metalization System, maximum current 2.0A, maximum voltage 45V, maximum power 31.8W, package type 4L STUD
This is an English datasheet for ASI ULBM2, which introduces the features and characteristics of the product, including BVCEO, BVCES, BVCBO, VEBO, ICBO, hFE, Cob, PG, ηηC, IC, VCBO, VCEO, VCES, VEBO, PDISS, TJ, TSTG, θθJC.
This document is a technical datasheet of ASI ULBM2T, which introduces the features and characteristics of the product, including maximum rated current, maximum rated voltage, maximum rated power, etc.
This document describes the features and characteristics of the ASI ULBM2TE model, including maximum operating current, maximum operating voltage, maximum power dissipation, etc.
This document is a product datasheet for the ASI ULBM5 model, describing its features and characteristics, such as maximum operating current, maximum operating voltage, maximum power dissipation, etc.
The document describes the features and characteristics of the ASI ULBM5SL product, including maximum operating current, maximum operating voltage, and maximum power dissipation.
The ASI ULBM10 is a NPN silicon RF power transistor designed for Omnigold™ Metalization System, with maximum current IC of 2.5A, maximum collector-base reverse voltage VCBO of 36V, maximum collector-emitter open voltage VCEO of 16V, maximum collector-emitter reverse voltage VCES of 36V, maximum emitter-base reverse voltage VEBO of 4.0V, maximum power dissipation PDISS of 58W, operating temperature range of TJ-65℃ to +200℃, storage temperature range of TSTG-65℃ to +150℃, and thermal resistance θθJC of 7.0℃/W.
This datasheet is about the specifications of ASI ULBM35, including BVCEO IC, BVCES IC, BVEBO IE, ICES VCE, hFE VCE, Cob VCB, PG, ηηC, IC, VCBO, VCEO, VEBO, PDISS, TJ, TSTG, θθJC
