ASI manuals, page 7
ASI AUR300 handbook
The characteristics of NPN silicon RF power transistor AUR300, including minimum, typical, maximum values, as well as package size
ASI AJT150 NPN SILICON RF POWER TRANSISTOR handbook
This document describes the characteristics and features of the ASI AJT150 NPN Silicon RF Power Transistor, including parameters such as BVCEO, BVCER, BVEBO, ICES, and hFE.
ASI AJT085 NPN SILICON RF POWER TRANSISTOR handbook
The document describes the features and characteristics of the ASI AJT085 NPN silicon RF power transistor, including voltage, current, power output, and other parameters.
ASI AJT030 NPN SILICON RF POWER TRANSISTOR handbook
AJT030 is a NPN silicon RF power transistor from ASI company. It has input matching network and Omnigold metallization system. It has a maximum current of 3.5A, a maximum voltage of 40V, and a maximum power dissipation of 75W. It works in a temperature range of -65 to 250℃.
ASI AJT015 NPN SILICON RF POWER TRANSISTOR handbook
The document describes the features and characteristics of the ASI AJT015 model, including input matching network and Omnigold™ metallization system.
ASI AJT006 NPN SILICON RF POWER TRANSISTOR handbook
AJT006 is a NPN silicon RF power transistor produced by Advanced Semiconductor Inc., with a maximum current of 0.9A, a maximum operating voltage of 32V, and a maximum power of 25W.
ASI ASI4003 NPN SILICON RF POWER TRANSISTOR handbook
ASI4003 is a NPN silicon RF power transistor designed for general purpose Class C power amplifier applications up to 4200MHz.
ASI ASI4001 NPN SILICON RF POWER TRANSISTOR handbook
This data sheet provides ASI4001 characteristics parameters such as BVCBO, BVCER, RBE, BVEBO, ICBO, hFE, COB, PG, ηηC etc.
ASI ASI4000 NPN SILICON RF POWER TRANSISTOR handbook
ASI4000 is a NPN silicon RF power transistor designed by Advanced Semiconductor Inc. (ASI) for general purpose Class C power amplifier applications up to 4200MHz.
ASI NPN SILICON RF POWER TRANSISTOR handbook
ASI10540 is a NPN silicon RF power transistor produced by Advanced Semiconductor, Inc. This transistor is designed for general purpose Class C power amplifier applications up to 3500 MHz. Its features include PG = 4.5 dB min. at 5 W / 3,000 MHz, Hermetic Microstrip Package and Omnigold™ Metalization System.
ASI ASI3003 NPN SILICON RF POWER TRANSISTOR handbook
The ASI 3003 is a NPN silicon RF power transistor designed for general purpose Class C power amplifier applications up to 3500 MHz.
ASI ASI3001 NPN SILICON RF POWER TRANSISTOR handbook
The document describes the features and characteristics of the ASI3001 model NPN silicon RF power transistor, suitable for general purpose Class C power amplifier applications up to 3500 MHz.
ASI AVD0.5P NPN SILICON RF POWER TRANSISTOR handbook
This document describes the features and characteristics of the ASI AVD0.5P NPN Silicon RF Power Transistor, including minimum current gain, maximum voltage, and power.
ASI AVD002F NPN SILICON RF POWER TRANSISTOR handbook
ASI AVD002P NPN SILICON RF POWER TRANSISTOR handbook
This datasheet provides information about the specifications of ASI AVD002P product, including maximum voltage, maximum current, maximum power, and operating temperature range.
