This document describes the characteristics and features of the ASI AJT150 NPN Silicon RF Power Transistor, including parameters such as BVCEO, BVCER, BVEBO, ICES, and hFE.
The document describes the features and characteristics of the ASI AJT085 NPN silicon RF power transistor, including voltage, current, power output, and other parameters.
AJT030 is a NPN silicon RF power transistor from ASI company. It has input matching network and Omnigold metallization system. It has a maximum current of 3.5A, a maximum voltage of 40V, and a maximum power dissipation of 75W. It works in a temperature range of -65 to 250℃.
AJT006 is a NPN silicon RF power transistor produced by Advanced Semiconductor Inc., with a maximum current of 0.9A, a maximum operating voltage of 32V, and a maximum power of 25W.
ASI4000 is a NPN silicon RF power transistor designed by Advanced Semiconductor Inc. (ASI) for general purpose Class C power amplifier applications up to 4200MHz.
ASI10540 is a NPN silicon RF power transistor produced by Advanced Semiconductor, Inc. This transistor is designed for general purpose Class C power amplifier applications up to 3500 MHz. Its features include PG = 4.5 dB min. at 5 W / 3,000 MHz, Hermetic Microstrip Package and Omnigold™ Metalization System.
The document describes the features and characteristics of the ASI3001 model NPN silicon RF power transistor, suitable for general purpose Class C power amplifier applications up to 3500 MHz.
This document describes the features and characteristics of the ASI AVD0.5P NPN Silicon RF Power Transistor, including minimum current gain, maximum voltage, and power.
This datasheet provides information about the specifications of ASI AVD002P product, including maximum voltage, maximum current, maximum power, and operating temperature range.
