This data sheet is about ASI AVF250 NPN Silicon RF Power Transistor. The maximum rated current of this transistor is 18.8A, the maximum rated voltage is 55V, and the maximum power dissipation is 625W.
This datasheet provides detailed information on the ASI AVF100 NPN silicon RF power transistor, including maximum current, maximum voltage, maximum power, resistance, temperature range, etc.
The AVD400 is a NPN silicon RF power transistor from ASI company, with a maximum current of 28A, a maximum voltage of 55V, a maximum power consumption of 1000W, and a working temperature range of -65℃ to +250℃.
This document describes the characteristics and features of the AVD350 model by Advanced Semiconductor, Inc. The AVD350 is an NPN silicon RF power transistor designed for input matching networks, featuring the Omnigold™ metallization system.
The AVD250 is a NPN silicon RF power transistor produced by ASI. Its maximum current is 17.8 A, maximum voltage is 55 V, and maximum power is 600 W. The transistor has input matching network and Omnigold™ metallization system features.
The AVD150 is a NPN Silicon RF Power Transistor from Advanced Semiconductor. This transistor features an input matching network and the Omnigold™ Metalization System. The maximum ratings are IC 11 A, VCC 55 V, PDISS 400 W @ TC = 25 OC, TJ -65 OC to +250 OC and TSTG -65 OC to +200 OC.
This document describes the features and characteristics of a NPN silicon RF power transistor called AVD075P. It has features such as a maximum operating current of 6.5A, maximum peak voltage of 55V, and maximum power dissipation of 250W.
This is a NPN silicon RF power transistor with a maximum current of 6.5 A, a maximum voltage of 55 V and a maximum power of 250 W. The product features the Omnigold™ metallization system.
