The ASI OSC-0.7L is a NPN silicon RF power transistor with a maximum power dissipation of 7.0 W and a maximum collector-emitter voltage of 40 V. It features an Omnigold™ metalization system and is available in a TO-46 package.
The document describes an NPN silicon RF power transistor with low noise, high current, and high frequency characteristics. The transistor is suitable for RF power amplifier applications.
The TVU0.5 is a NPN silicon RF power transistor with a maximum current of 2.0A, a maximum voltage of 45V, a maximum voltage of 25V, a maximum voltage of 3.5V, and a maximum output power of 31.8W.
This is a specification sheet for the ASI TVU0.5A NPN silicon RF power transistor. The transistor features characteristics such as BVCBO, BVCEO, BVEBO, ICBO, hFE, PG IMD1, and utilizes the Omnigold™ Metalization System. It is suitable for applications such as RF power amplifiers.
ASI TVU0.5B is an NPN Silicon RF Power Transistor that features Omnigold™ Metalization System, Maximum Current 2.0 A, Maximum Voltage 45 V, Maximum Power 31.8 W
The document provides information about the features and characteristics of the ASI TVU002, including minimum, typical, and maximum values for parameters such as current, voltage, power dissipation, etc.
The data table provides the specifications of ASI MLN1027S, including maximum current, maximum voltage, maximum power, minimum power, minimum current, etc.
This is the datasheet for the MLN1027SS from Advanced Semiconductor Inc. It is a NPN Silicon RF Power Transistor with a maximum VCE of 35V and a maximum IC of 10A.