ASI Manuals - Page 3

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ASI manuals, page 3

  • ASI ULBM0.5 NPN SILICON RF POWER TRANSISTOR Manual

    This is a datasheet of ASI ULBM0.5, which introduces its features and characteristics including BVCEO, BVCES, BVEBO, hFE, Cob, PG, etc.

  • ASI UHBS60-2 NPN SILICON RF POWER TRANSISTOR Manual

    This document describes the features and characteristics of the ASI UHBS60-2 model, including its maximum ratings, current, voltage, and frequency parameters.

  • ASI UHBS60-1 NPN SILICON RF POWER TRANSISTOR Manual

    This datasheet is about ASI UHBS60-1 parameters, including BVCBO, BVCES, BVCEO, BVEBO, ICES, ICBO, hFE, Cob, PG, ηηC, IC, VCBO, VCEO, VCES, VEBO, PDISS, TJ, TSTG, θθJC.

  • ASI UHBS30-2 NPN SILICON RF POWER TRANSISTOR Manual

    This document describes the features and characteristics of the NPN Silicon RF Power Transistor UHBS30-2, which is suitable for high-frequency applications.

  • ASI UHBS30-1 NPN SILICON RF POWER TRANSISTOR Manual

    The UHBS30-1 is a NPN silicon RF power transistor with maximum ratings of 9.0 A, 50 V, 30 V and 4.0 V. It features Omnigold™ metalization system, 6L FLG package and 1.5 OC/W thermal resistance.

  • ASI UHBS15-1 NPN SILICON RF POWER TRANSISTOR Manual

    The document describes the features and characteristics of the ASI UHBS15-1, which is an NPN silicon RF power transistor with excellent performance and high reliability.

  • ASI MLN1030SS handbook

    The document provides information about the features and characteristics of the ASI MLN1030SS model, including minimum, maximum, and typical values for various parameters.

  • ASI MLN1033F handbook

    The ASI MLN1033F is a NPN silicon RF power transistor designed for applications requiring high power and good thermal performance. It features a maximum power dissipation of 20.6W and a gain of 12dB.

  • ASI MLN1033S handbook

    The document describes the features and characteristics of the ASI MLN1033S model.

  • ASI MLN1037F handbook

    The ASI MLN1037F is a NPN silicon RF power transistor from Advanced Semiconductor, Inc. It features the Omnigold™ metallization system, and is rated for 10 A current, 60 V and 35 V voltage, and a maximum power dissipation of 140 W.

  • ASI MLN2027F handbook

  • ASI MLN2027SS handbook

    This datasheet provides the specifications of the ASI MLN2027SS including ratings, characteristics, maximum, and package dimension.

  • ASI MLN2030F handbook

    This document is the technical specifications of ASI MLN2030F, including maximum and minimum working voltage, power and current.

  • ASI MLN2030SS handbook

    This document describes the characteristics and parameters of the MLN2030SS NPN Silicon RF Power Transistor from Advanced Semiconductor Inc.

  • ASI OSC-0.3C handbook

    This is a product manual introducing the characteristics and features of ASI OSC-0.3C. This product is a NPN silicon RF power transistor with Omnigold™ metalization system, maximum current of 225mA, maximum voltage of 25V, and maximum power of 5.0W.