The AVD004F is an ASI designed NPN Silicon RF Power Transistor with Omnigold Metalization System. This chip has a maximum current of 650 mA, voltage of 32V and power of 18W.
This is a NPN silicon RF power transistor from Advanced Semiconductor. The model number is AVD004P. Its features include Omnigold™ metalization system, maximum current of 650mA, maximum voltage of 32V, and maximum power dissipation of 18W.
AVD015F is a NPN silicon RF power transistor produced by ASI company. Its features are Omnigold metallization system, maximum current of 1.25A, maximum voltage of 50V, maximum power of 50W, and working temperature range of -65℃ to 200℃.
The ASI AVD015P is a NPN silicon RF power transistor with the Omnigold™ metallization system, has a maximum current of 1.25A peak, a maximum voltage of 50V, and a maximum power dissipation of 50W peak.
The ASI 2001 is an NPN silicon RF power transistor designed for general purpose power amplifier applications up to 2300 MHz. It features high output power and efficiency.
The document describes the features and characteristics of the ASI 2003 model, which is an NPN silicon RF power transistor designed for general-purpose power amplifier applications up to 2300 MHz.
The document describes the features and characteristics of the ASI2005 NPN Silicon RF Power Transistor, designed for general purpose Class C power amplifier applications up to 2300 MHz.
ASI2010 is a NPN Silicon RF Power Transistor designed for General Purpose Class C Power Amplifier Applications up to 2300MHz. Features: PG = 5 dB min. at 10 W/ 2,000 MHz; Hermetic Microstrip Package; Omnigold™ Metalization System.
The document describes the features and characteristics of the ASI 2223-20 NPN Silicon RF Power Transistor. The transistor features an input matching network and Omnigold™ metallization system.
This document is a specification sheet for the ASI2302 NPN Silicon RF Power Transistor. The transistor is designed for general purpose Class C power amplifier applications up to 3000 MHz. It features a minimum PG of 9.5 dB at 2 W / 2300 MHz. The transistor is packaged in a hermetic microstrip package and utilizes the Omnigold™ metalization system.
ASI2304 is a NPN silicon RF power transistor designed for general purpose Class C power amplifier applications. It features high gain, low noise, low power consumption and low on-resistance, making it ideal for use in high frequency and high power amplifiers.
The document describes the features and characteristics of the ASI3000 NPN Silicon RF Power Transistor, which is widely used in general purpose Class C power amplifier applications up to 3500 MHz. Features include a minimum power gain of 7 dB, hermetic microstrip package, and Omnigold metallization system.
