STMicroelectronics Manuals

This document describes the features and characteristics of STP11NK50Z - STP11NK50ZFP STB11NK50Z N-CHANNEL 500V - 0.48Ω - 10A TO-220/TO-220FP/D2PAK Zener-Protected SuperMESH™Power MOSFET, including extremely high dv/dt capability, 100% avalanche tested, minimized gate charge, very low intrinsic capacitances, very good manufacturing repeatability, etc.

This document describes the features and characteristics of STP11NK40Z, STP11NK40ZFP, and STB11NK40Z, which are N-channel 400V power MOSFETs. These features include extremely low on-resistance, extremely high dv/dt capability, 100% avalanche tested, minimized gate charge and intrinsic capacitances.

The document describes the features and characteristics of an N-channel 400V - 0.44Ω - 9.5A TO-220/TO-220FP PowerMESH™II power MOSFET. It has extremely high dv/dt capability, 100% avalanche tested, and introduces a new high voltage benchmark. The product is suitable for high current, high speed switching, switch mode power supplies, DC-AC converters for welding equipment and uninterruptible power supplies, and motor drivers.

STP11NB40 and STP11NB40FP are N-channel 400V power MOSFETs with an RDS(on) of 0.48Ω, extremely high dV/dt capability, 100% avalanche tested, very low intrinsic capacitances, and minimized gate charge. They are suitable for high current, high-speed switching, switch mode power supplies, DC-AC converters for welding equipment, uninterruptible power supplies, and motor drive applications.

This document describes the features and characteristics of the STP10NK80Z series N-channel 800V MOSFET, including extremely high dv/dt capability, 100% avalanche tested, minimized gate charge, very low intrinsic capacitances, and very good manufacturing repeatability.

The STP10NK70Z/STP10NK70ZFP is a ST's N-channel 700V low resistance SuperMESH™ Power MOSFET, with typical RDS(on) of 0.75 Ohm, extremely high dv/dt capability, which is ideal for high current, high speed switching applications.

STB10NK60Z is a 600V-0.65Ω-10A N-channel Zener-Protected SuperMESH™ Power MOSFET. It features a typical RDS(on) = 0.65 Ω, extremely high dv/dt capability, 100% avalanche tested, minimized gate charge and very low intrinsic capacitances. It is ideal for high current, high speed switching applications such as off-line power supplies, adaptors and PFC.

STP10NC50/STP10NC50FP is a N-channel high voltage MOSFET designed by STMicroelectronics, using the latest MESH OVERLAY process, it has the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics. It is widely used in high-frequency, high-voltage switching circuits.

STGP10NB60SFP is a N-channel IGBT from STMicroelectronics. It has a maximum voltage of 600V and a maximum current of 10A. The package type is TO-220FP.

STP10NB50 / STP10NB50FP is a N - channel 500V/0.55Ω/10.6A power MOSFET produced by STMicroelectronics. It has low RDS(on), high dv/dt and low gate charge, and is used for high current, high frequency switching, switch mode power supplies, DC-AC converters, welding equipment and uninterruptible power supplies.

STP10NB20 is a high performance N-channel enhancement mode PowerMESH MOSFET designed by SGS-Thomson. Its features are RDS(on) as low as 0.3 Ω, extremely high dv/dt capability, 100% avalanche tested, very low intrinsic capacitances, and minimized gate charge.

STP10NA40 and STP10NA40FI are N-channel enhancement mode fast power MOS transistors. They have low RDS(on) and gate charge, unmatched ruggedness, and superior switching performance. They are suitable for high current, high-speed switching, switch mode power supplies, DC-AC converters for welding equipment and uninterruptible power supplies, and motor drive.

STP100NF04L is a N-channel power MOSFET from STMicroelectronics. Its features include low on-resistance, low threshold drive, 100% avalanche testing, and logic level device. It is suitable for high current, high switching speed applications, such as motor control, audio amplifiers, DC-DC and DC-AC converters.

STP100NF04, STB100NF04, and STB100NF04-1 are N-Channel 40V - 0.0043Ω - 120A TO-220/D2PAK/I2PAK STripFET™ II power MOSFETs. They exhibit low on-resistance, rugged avalanche characteristics, and high manufacturing reproducibility.

STMicroelectronis latest STB100NF03L-03 is a N-channel 30V - 0.0026 Ω -100A D²PAK/I²PAK/TO-220 STripFET™ II POWER MOSFET with typical RDS(on) = 0.0026 Ω, low threshold drive, 100% avalanche tested and logic level device.