STP130NS04ZB is a N-channel MOSFET produced by ST company. Its features are RDS(on) typical value is 7mΩ, 100% Avalanche tested, low capacitance and gate charge, maximum junction temperature is 175°C.
This document describes the STP130NS04ZB, STB130NS04ZB, and STW130NS04ZB fully clamped MOSFETs. These devices utilize a novel Mesh Overlay process to provide extra ruggedness suitable for harsh automotive environments and high switching current applications.
The datasheet provides absolute maximum ratings, electrical characteristics including on/off parameters and dynamic behavior, avalanche characteristics, thermal data, and mechanical dimensions for TO-220, D?PAK (TO-263), and TO-247 packages.
| Drain Current (continuous) at Tc = 25°C | 80 A |
|---|---|
| Total Dissipation at Tc = 25°C | 300 W |
| Maximum Junction Temperature | 175°C |
| Typical Rds(on) | < 9 mΩ |
The maximum junction temperature is 175°C.
The continuous drain current is 80 A at Tc = 25°C.
The typical static drain-source on-resistance is 7 mΩ.