STMicroelectronics Manuals - Page 246

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STMicroelectronics manuals, page 246

  • ST STP8NK85Z/STF8NK85Z handbook

    The STP8NK85Z is an N-channel MOSFET produced by ST. Its features are a typical Rds(on) of 1.1 ohms, extremely high dv/dt capability, improved ESD capability, 100% avalanche rating, minimized gate charge, very low intrinsic capacitances, and very good manufacturing repeatability.

  • ST STF817/STN817 handbook

    STF817 STN817 are PNP medium power transistors manufactured using Planar Technology resulting in rugged high performance devices.

  • ST STP7NK30Z/STF7NK30Z handbook

    The STP7NK30Z is a N-channel 300V-0.80Ω-5A TO-220/TO-220FP Zener-Protected SuperMESH™Power MOSFET from ST, which has extremely low parasitic capacitances and very good manufacturing repeatability, and is suitable for high current, high speed switching applications such as offline power supplies, adaptors and PFC etc.

  • ST STF724/STN724 handbook

    This document is about the STF724 and STN724 PNP Medium Power Transistors. They are manufactured using planar technology, resulting in rugged high performance devices. This document details the products features, characteristics, applications, packaging, component marking, polarity, absolute maximum ratings, temperature characteristics, electrical characteristics etc.

  • ST STF715/STN715 handbook

    STF715 and STN715 are NPN transistors manufactured using Planar Technology resulting in rugged high performance devices.

  • ST STP6NK70Z/STF6NK70Z handbook

    STP6NK70Z is an N-channel 700V - 1.5Ω - 5A TO-220/TO-220FP Zener-Protected SuperMESH™MOSFET produced by ST company, which has the characteristics of typical RDS(on) = 1.5 Ω, extremely high dv/dt capability, improved ESD capability, 100% Avalanche Rated, minimized Gate Charge, very low Intrinsic Capacitances, and very good manufacturing repeatability.

  • ST STP6NK50Z/STF6NK50Z/STD6NK50Z handbook

    STP6NK50Z - STF6NK50Z STD6NK50Z N-CHANNEL 500V - 0.93Ω - 5.6A TO-220/TO-220FP/DPAK Zener-Protected SuperMESH™ MOSFET is a high performance MOSFET device from ST, with a typical RDS(on) of 0.93Ω. It is ideal for high current, high speed switching applications such as offline power supplies, adaptors and PFC.

  • ST STP5NK90Z/STF5NK90Z handbook

    This document describes the features and characteristics of STP5NK90Z and STF5NK90Z N-CHANNEL 900V - 2Ω - 4.5A TO-220/TO-220FP Zener-Protected SuperMESH™MOSFET, including extremely high dv/dt capability, improved ESD capability, 100% avalanche rated, and minimized gate charge.

  • ST STP5NK100Z/STF5NK100Z/STW5NK100Z handbook

    STP5NK100Z - STF5NK100Z - STW5NK100Z are ST's high voltage MOSFET products with extremely low RDS(on) and very high dv/dt capability. It is suitable for high current, high speed switching applications, and is ideal for off-line power supplies.

  • ST STF42 handbook

    STF42 is a small signal NPN transistor with high voltage characteristics and SOT-89 package. It is suitable for applications such as video amplifier circuits and telephone wireline interfaces.

  • ST STF40NF06 handbook

    This document describes the features and characteristics of the STF40NF06 N-CHANNEL MOSFET, including low on-resistance, exceptional dv/dt capability, low gate charge, etc. This product is suitable for applications such as DC-DC and DC-AC converters, motor control, audio amplifiers, high current high-speed switching, solenoid and relay drivers, etc.

  • ST STF4045DF/STF4045DV handbook

  • ST STF4045AF/STF4045AV handbook

  • ST STP3NK80Z/STF3NK80Z/STD3NK80Z/STD3NK80Z-1 handbook

    This document describes the features and characteristics of STP3NK80Z - STF3NK80Z STD3NK80Z - STD3NK80Z-1 N-CHANNEL 800V - 3.8Ω - 2.5A TO-220/FP/DPAK/IPAK Zener-Protected SuperMESH™ Power MOSFET. The product has extremely high dv/dt capability, 100% avalanche tested, minimized gate charge, very low intrinsic capacitances, and very good manufacturing repeatability.

  • ST STP3HNK90Z/STF3HNK90Z handbook

    STP3HNK90Z - STF3HNK90Z is an N-channel SuperMESH™ Power MOSFET with a working voltage of 900V, a typical on-resistance of 3.5Ω, and a rated current of 3A. The product has extremely high dv/dt capability, is 100% avalanche tested, minimizes gate charge, and has very low intrinsic capacitances with excellent manufacturing repeatability.