STMicroelectronics Manuals - Page 247

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STMicroelectronics manuals, page 247

  • ST STF2NK60Z/STQ2NK60ZR-AP/STP2NK60Z/STD2NK60Z-1 handbook

    STF2NK60Z - STQ2NK60ZR-AP STP2NK60Z - STD2NK60Z-1 N-CHANNEL 600V - 7.2Ω - 1.4A TO-220/TO-220FP/TO-92/IPAK Zener-Protected SuperMESH™ MOSFET is a high-performance MOSFET device produced by ST company. Its characteristics are RON typical value is 7.2Ω, extremely high dv/dt capability, ESD improved capability, 100% avalanche test, new generation high voltage benchmark, and minimized gate charge. It is suitable for low-power battery chargers, switch-mode low-power power supplies (SMPS), low-power, ballasts, CFL (compact fluorescent lamps) and other applications.

  • ST STQ2HNK60ZR-AP/STF2HNK60Z/STD2HNK60Z-1 handbook

    This is the ST release STQ2HNK60ZR-AP, STF2HNK60Z, STD2HNK60Z-1 N-CHANNEL 600V - 4.4Ω - 2.0A TO-92/TO-220FP/IPAK Zener-Protected SuperMESH™ MOSFET datasheet. This series has extremely high dv/dt capability, ESD improved capability, 100% avalanche tested, new high voltage benchmark, minimized gate charge and other features.

  • ST STF2907A handbook

    STF2907A is a small signal PNP transistor suitable for portable equipment, with high gain and low saturation voltage.

  • ST STP25NM60N STF25NM60N STB25NM60N/-1 STW25NM60N handbook

    The STP25NM60N is a second generation MDmesh™ MOSFET N-channel 600V 0.140Ω-20A TO-220/FP/D²/I²PAK/TO-247. It has the world's lowest on resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.

  • ST STP25NM50N STF25NM50N STB25NM50N/-1 STW25NM50N handbook

    The STx25NM50N is realized with the second generation of MDmesh Technology. This revolutionary MOSFET associates a new vertical structure to the Company's strip layout to yield one of the world's lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters

  • ST STP22NM60/STF22NM60/STB22NM60/STB22NM60-1/STW22NM60 handbook

    STP22NM60 is ST company's N-CHANNEL 600V - 0.19 Ω - 22A TO-220/FP/D2PAK/I2PAK/TO-247 MDmesh™ Power MOSFET, with low input capacitance and gate charge, 100% avalanche tested, very suitable for increasing the power density of high voltage converters, enabling system miniaturization and higher efficiency.

  • ST STP22NM50/STP22NM50FP/STB22NM50/STB22NM50-1 handbook

    This document describes the features and characteristics of the STP22NM50 and STB22NM50 series N-channel power MOSFETs, such as low on-resistance, high dv/dt, and excellent avalanche capabilities.

  • ST STF2222A handbook

    STF2222A is a small signal NPN transistor, SOT-89 plastic package, with high gain and low saturation voltage. It is suitable for small load switching transistors in portable equipment.

  • ST STP21NM50N/STF21NM50N/STW21NM50N/STB21NM50N/STB21NM50N-1 handbook

    STB21NM50N is a N-channel 500V-0.15Ω-18A MOSFET from ST company, using the second generation MDmesh technology, with 100% avalanche tested, low input capacitance and gate charge, low gate input resistance, suitable for high efficiency converters.

  • ST STP20NM60FD/STF20NM60D/STW20NM60FD handbook

    The STP20NM60FD / STF20NM60D / STW20NM60FD is a N-channel 600V - 0.26Ω - 20A TO-220/TO-220FP/TO-247 FDmesh™ POWER MOSFET (with FAST DIODE) with typical RDS(on) = 0.26Ω, high dv/dt and avalanche capabilities, 100% avalanche tested, low input capacitance and gate charge, low gate input resistance, tight process control and high manufacturing yields. It is therefore strongly recommended for bridge topologies, in particular ZVS phase-shift converters. Applications include ZVS phase-shift full bridge converters for SMPS and welding equipment.

  • ST STD9NM60N/STD9NM60N-1/STP9NM60N/STF9NM60N handbook

    This document describes the features and characteristics of the 1/9 May 2005 STF24NF12 N-CHANNEL 120V - 0.070Ω - 24A - TO-220FP low gate charge STripFET™II MOSFET.

  • ST STP20NF06/STF20NF06 handbook

    This document describes the STP20NF06 and STF20NF06 N-channel power MOSFET models produced by STMicroelectronis. These MOSFETs have low on-resistance, rugged avalanche characteristics, high operating temperature, and high dv/dt capability. They are suitable for applications such as DC motor control and DC-DC, DC-AC converters.

  • ST STP20N20/STF20N20/STD20N20 handbook

    The STP20N20 STF20N20 - STD20N20 from STMicroelectronics is an N-channel 200V MOSFET with low gate charge and exceptional dv/dt capability. It is suitable as a primary switch in high-efficiency isolated DC-DC converters.

  • ST STEVAL-MKI006V1 handbook(1)

    This data brief introduces the STEVAL-MKI006V1 evaluation board, which is based on the LIS302DL low power 3-axis linear accelerometer with digital output. The board includes a sensing element and an IC interface capable of translating information from the sensing element into a measured signal that can be used for external applications. In addition to the MEMS sensor, the evaluation board utilizes an ST7-USB microcontroller which functions as a bridge between the sensor and the PC, on which it is possible to use the graphical user interface (GUI) included with the kit or dedicated software routines for customized applications.

  • ST STEVAL-MKI009V1 handbook(1)

    This document is a technical brief for STEVAL-MKI009V1 Adapter Board, which is based on LIS3LV02DL 3-axis digital output linear accelerometer and is intended to provide the user with an effective solution for fast system prototyping and device evaluation directly within the user’s application.