STP11NM60A/STP11NM60AFP/STB11NM60A-1 is a N-CHANNEL 600V - 0.4Ω - 11A TO-220/TO-220FP/I2PAK MDmesh™Power MOSFET from ST company, with low RDS(on), high dv/dt, low input capacitance and gate charge, low gate input resistance.
This document describes the STP11NM60A, STP11NM60AFP, and STB11NM60A-1 N-channel 600V MDmesh™ Power MOSFETs. These devices feature a revolutionary technology combining Multiple Drain process with PowerMESH horizontal layout to achieve low on-resistance and high dv/dt performance.
| Gate- source Voltage | +30 V |
|---|---|
| Operating Junction Temperature | -55 to 150 °C |
The device supports a maximum continuous drain current of 11 A when the case temperature is 25°C.
The device can operate with a maximum junction temperature of 150°C.