This document provides preliminary information on a new product developed by STMicroelectronics. The product is an N-channel power MOSFET with low on-resistance, gate charge, and reverse recovery charge. It is suitable for switch applications in a wide range of fields such as automotive, consumer, telecom, and industrial.
This document is a preliminary datasheet for the STB135N10 and STP135N10 N-channel power MOSFETs. These devices feature extremely low on-resistance (typical 0.007 Ω) and gate charge, designed for high-efficiency applications such as automotive systems, telecom DC-DC converters, and motor control.
| Drain-source Voltage (Vdss) | 100 V |
|---|---|
| Continuous Drain Current at Tc=25°C | 135 A |
| Typical On-Resistance Rds(on) | 0.007 Ω |
| Total Dissipation at Tc=25°C | 150 W |
The devices are ideal for automotive, consumer, telecom, and industrial applications including primary switches in DC-DC converters.
The storage temperature ranges from -55 to 175 °C.