STB120NF10/STP120NF10 is a N-MOSFET produced by STMicroelectronics. It features a low RDS(on) of 0.009 Ω and is suitable for use as a power switch in telecommunications and computer applications.
This document describes the STB120NF10 and STP120NF10 N-Channel 100V - 120A STripFET II Power MOSFETs. These devices are designed to minimize on-resistance and are suitable as primary switches in high-efficiency, high-frequency isolated DC-DC converters for telecom and computer applications, as well as audio amplifiers and power tools. They feature surface-mounting D2PAK (TO-263) and TO-220 packages.
| Thermal Resistance Junction-case | 0.48 °C/W |
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The single pulse avalanche energy is 550 mJ.
The device supports a continuous drain current of 120 A when the case temperature is 25°C.
The maximum total power dissipation is 312 W when the case temperature is 25°C.
The device can be stored between -55 °C and +175 °C.