This document describes an N-channel power MOSFET with low on-resistance, fast switching, and built-in fast recovery diode. It is suitable for bridge topologies and zero-voltage switching phase-shift converters.
This document provides technical specifications for a series of N-channel 500V FDmesh™ Power MOSFETs with integrated FAST DIODEs. The devices are designed for high dv/dt and avalanche capabilities, making them suitable for bridge topologies such as ZVS phase-shift converters used in SMPS and welding equipment.
The datasheet covers absolute maximum ratings, electrical characteristics including on-resistance and switching times, safe operating areas for various packages (TO-220, D²PAK, I²PAK, TO-247), thermal data, avalanche characteristics, and mechanical dimensions.
| Continuous Drain Current (TO-220/D²PAK) | 12 A |
|---|---|
| Continuous Drain Current (TO-247) | 14 A |
| Total Dissipation (TO-220/D²PAK) | 160 W |
| Total Dissipation (D²PAK) | 35 W |
| Static Drain-source On Resistance (Typical) | 0.32 Ω |
They are strongly recommended for bridge topologies, particularly ZVS phase-shift converters.
The maximum operating junction temperature (Tj) ranges from -65 to 150 °C.
Available packages include TO-220, D²PAK, I²PAK, and TO-247.