STB11NM60FD-1 is ST's 600V N-channel MOSFET with a typical RDS(on) of 0.45 ohms, high dv/dt and avalanche capabilities, 100% avalanche tested, low input capacitance and gate charge, low gate input resistance, tight process control and high manufacturing yields.
This document provides technical specifications and application information for the STMicroelectronics FDmesh™ power MOSFET family. The devices feature an intrinsic fast-recovery body diode, making them suitable for bridge topologies such as ZVS phase-shift converters used in SMPS and welding equipment.
The datasheet details absolute maximum ratings, electrical characteristics including on-resistance and switching times, avalanche capabilities, and thermal data for various packages (TO-220, TO-220FP, D2PAK, I?7PAK). It also includes safe operating area graphs, typical application circuits, and mechanical footprint dimensions.
They are strongly recommended for bridge topologies, particularly ZVS phase-shift converters.