The document describes the features and characteristics of a series of SuperMESH power MOSFET products produced by ST. These products have extremely low on-resistance, extremely high dv/dt capability, 100% avalanche tested, minimized gate charge, and very low intrinsic capacitance. They are suitable for high current, high-speed switching, offline power supplies, adapters and PFC, and lighting applications.
This document is a datasheet for the STMicroelectronics N-channel 600V Super MESH™ Power MOSFET series. The devices feature extremely high dv/dt capability, minimized gate charge, and very low intrinsic capacitances. They are Zener-protected to enhance ESD capability and safely absorb voltage transients without requiring external components.
| Static Drain-source On Resistance (Typical) | 0.48 Q |
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The devices are available in TO-220, TO-220FP, D?PAK, I?7PAK, and TO-247 packages.
They are ideal for off-line power supplies, adaptors, PFC, and lighting applications.