STP12NM50 - STP12NM50FP STB12NM50 - STB12NM50-1 N-CHANNEL 550V @ Tjmax-0.30Ω - 12A TO-220/FP/D²/I²PAK Zener-Protected SuperMESH™MOSFET is a high-performance MOSFET with outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. This product is very suitable for increasing the power density of high voltage converters allowing system miniaturization and higher efficiencies.
This document is a datasheet for the STP12NM50, STP12NM50FP, STB12NM50, and STB12NM50-1 N-channel MOSFETs. These devices utilize STMicroelectronics' proprietary MDmesh™ technology, combining Multiple Drain processing with PowerMESH™ horizontal layout to achieve outstanding low on-resistance and excellent avalanche characteristics.
| Drain-Source Breakdown Voltage | 550V |
|---|---|
| Continuous Drain Current (Tc = 25°C) | 12 A |
| Total Dissipation (Tc = 25°C) | 160 W |
| Operating Junction Temperature | -65 to 150 °C |
| Static Drain-source On Resistance | <0.35 Q |
| Input Capacitance | 1000 pF |
The operating junction temperature ranges from -65 to 150 °C.