IXYS Manuals

DE375-501N21A RF Power MOSFET is a RF power MOSFET produced by IXYS. Its maximum ratings are VDSS = 500 V, ID25 = 25 A, RDS(on) = 0.22 Ω, and PDC = 940 W. Its features are high isolation voltage (>2500V), excellent thermal transfer, increased temperature and power cycling capability, low gate charge and capacitance, easier to drive, faster switching, low RDS(on), very low insertion inductance (<2nH), and no beryllium oxide (BeO) or other hazardous materials.

IXGH24N50B/24N60B is a high frequency IGBT produced by IXYS, with high current handling capability, high power density, high switching speed and other characteristics, suitable for AC motor speed control, DC servo and robot drive, DC chopper, uninterruptible power supply, switched mode and resonant mode power supply etc.

The document describes the features and characteristics of IXYS products, including RF capability, low gate resistance, shock resistance, low package inductance, and fast intrinsic rectifier. It is suitable for applications such as DC-DC converters, switched-mode power supplies, pulse generators, laser drivers, and RF amplifiers.

IXFE 80N50 is a low RDS(on) and high dv/dt N-Channel Enhancement Mode Avalanche Rated Power MOSFET. It features low RDS(on), rugged polysilicon gate cell structure, UIS rated, low package inductance and fast intrinsic rectifier.

This product is a N-channel enhancement mode avalanche rated, high dv/dt, low trr single die MOSFET with low RDS(on), HDMOSTM process, rugged polysilicon gate cell structure, unclamped inductive switching (UIS) rated, low package inductance and fast intrinsic rectifier features.

The document describes a N-Channel Enhancement Mode HiPerFETTM MOSFET product from IXYS. This product belongs to the HDMOSTM family and features high dv/dt, low trr. It uses a silicon chip on a Direct-Copper-Bond substrate, which allows for high power dissipation, isolated mounting surface, and 2500V electrical isolation. Additionally, the product has low drain to tab capacitance (<35pF), low RDS (on), and a rugged polysilicon gate cell structure.

This document describes the features and characteristics of the IXFC52N30P model PolarHTTM HiPerFET power MOSFET product from IXYS. It features high power dissipation, isolated mounting surface, 2500V electrical isolation, and low drain to tab capacitance.

The document describes the features and characteristics of IXYS products, including high power dissipation, isolated mounting surface, low drain to tab capacitance, and low on-resistance.

This is the IXFC 15N80Q datasheet. IXFC 15N80Q is a Q-class N-channel enhancement mode avalanche rated, high dv/dt, low Qg HiPerFETTM ISOPLUS 220TM MOSFET. It has the following features: Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation - Low drain to tab capacitance(<35pF) - Low RDS (on) - Rugged polysilicon gate cell structure - Unclamped Inductive Switching (UIS) rated - Fast intrinsic Rectifier. Applications include DC-DC converters, battery chargers, switched-mode and resonant-mode power supplies, DC choppers and AC motor control. Advantages include easy assembly: no screws or isolation foils required - Space savings - High power density

This datasheet provides information on the IXYSEPLUS264TM(IXFB) product, including maximum ratings, characteristic values, features, applications, and advantages.

The document describes the features and characteristics of the N-channel enhancement mode high dv/dt, low trr, HDMOSTM family products manufactured by IXYS. The products have features such as low RDS(on), high voltage tolerance, and rugged structure. They are suitable for applications such as DC-DC converters, uninterruptible power supplies, battery chargers, switched-mode and resonant-mode power supplies.

This document mainly introduces the maximum ratings, characteristic values, packages, and application scenarios of the IXFH and IXFM series products.