IXYS Manuals

14N80 and 15N80 are N-Channel Enhancement Mode high dv/dt, low trr, HDMOSTM family power MOSFETs produced by IXYS company. Their features include international standard packages, low RDS (on), HDMOSTM process, rugged polysilicon gate cell structure, unclamped inductive switching (UIS) rated, low package inductance, easy to drive and protect, fast intrinsic rectifier, applied to DC-DC converters, synchronous rectifiers, battery chargers, switched-mode and resonant-mode power supplies, DC choppers, AC motor control, temperature and lighting controls, low voltage relays.

The document describes IXYS' high-power MOSFET products, including features and characteristics such as low RDS(on), easy mounting, space savings, high power density, etc.

This data sheet lists the maximum ratings, characteristic values, package information, etc. of HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family TO-247 AD (IXFH) TO-204 AA (IXFM).

IXFH/IXFM 11N80 and 13N80 are IXYS's high voltage N-channel enhancement mode power MOSFETs, with low RDS(on), high dv/dt and low trr characteristics, and TO-247 and TO-204 packages.

This document describes the features and characteristics of IXYS' HiPerRFTM Power MOSFETs, including RF capability, low gate resistance, avalanche rating, low package inductance, etc.

This document is about the HiPerRFTM Power MOSFETs F-Class: MegaHertz Switching product of IXYS company. This product has the characteristics of Low Qg, Low Intrinsic Rg, Low trr.

This document mainly introduces the maximum ratings, characteristic values, packages, and application scenarios of the IXFH and IXFM series products.

The document describes the features and characteristics of the N-channel enhancement mode high dv/dt, low trr, HDMOSTM family products manufactured by IXYS. The products have features such as low RDS(on), high voltage tolerance, and rugged structure. They are suitable for applications such as DC-DC converters, uninterruptible power supplies, battery chargers, switched-mode and resonant-mode power supplies.

This datasheet provides information on the IXYSEPLUS264TM(IXFB) product, including maximum ratings, characteristic values, features, applications, and advantages.

This is the IXFC 15N80Q datasheet. IXFC 15N80Q is a Q-class N-channel enhancement mode avalanche rated, high dv/dt, low Qg HiPerFETTM ISOPLUS 220TM MOSFET. It has the following features: Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation - Low drain to tab capacitance(<35pF) - Low RDS (on) - Rugged polysilicon gate cell structure - Unclamped Inductive Switching (UIS) rated - Fast intrinsic Rectifier. Applications include DC-DC converters, battery chargers, switched-mode and resonant-mode power supplies, DC choppers and AC motor control. Advantages include easy assembly: no screws or isolation foils required - Space savings - High power density

The document describes the features and characteristics of IXYS products, including high power dissipation, isolated mounting surface, low drain to tab capacitance, and low on-resistance.

This document describes the features and characteristics of the IXFC52N30P model PolarHTTM HiPerFET power MOSFET product from IXYS. It features high power dissipation, isolated mounting surface, 2500V electrical isolation, and low drain to tab capacitance.

The document describes a N-Channel Enhancement Mode HiPerFETTM MOSFET product from IXYS. This product belongs to the HDMOSTM family and features high dv/dt, low trr. It uses a silicon chip on a Direct-Copper-Bond substrate, which allows for high power dissipation, isolated mounting surface, and 2500V electrical isolation. Additionally, the product has low drain to tab capacitance (<35pF), low RDS (on), and a rugged polysilicon gate cell structure.

This product is a N-channel enhancement mode avalanche rated, high dv/dt, low trr single die MOSFET with low RDS(on), HDMOSTM process, rugged polysilicon gate cell structure, unclamped inductive switching (UIS) rated, low package inductance and fast intrinsic rectifier features.