IXYS Manuals

ixfk ixfn is a mosfet produced by ixys company. Its features include international standard packaging, low rds (on), high dv/dt and low trr, and applications in dc-dc converters, synchronous rectification, battery chargers, switched-mode and resonant-mode power supplies, dc choppers, temperature and lighting controls, etc.

This document describes IXYS' HiPerRFTM power MOSFETs, which feature RF capability, low gate resistance, low package inductance, high voltage and current ratings, etc. They are suitable for applications such as DC-DC converters, switched-mode power supplies, pulse generators, and RF amplifiers.

This document is about the datasheet of ixfh series mosfets, including the features, characteristics, parameters, application circuits of the series

This document describes the features and characteristics of the HiPerFETTM power MOSFET series products from IXYS, including advanced low Qg process, international standard packages, low gate charge and capacitance, low RDS(on), and strong avalanche rating.

Provides technical parameters for HiPerFETTM power MOSFETs, including maximum voltage, maximum current, maximum power, and maximum temperature.

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HiPerFETTM Power MOSFETs are N-Channel Enhancement Mode with High dv/dt, Low trr, and HDMOSTM Family.

The document describes the features and characteristics of a certain product.

The document describes the features and characteristics of the HiPerFETTM power MOSFET products produced by IXYS, including maximum ratings, symbol test conditions, and maximum electrical performance parameters.

This document introduces the HiPerFETTM Power MOSFET product series from IXYS, which features international standard packages, low RDS(on), rugged high voltage capability, and fast intrinsic diode. It is suitable for applications such as DC-DC converters, battery chargers, switched-mode and resonant-mode power supplies.

This document describes the features and characteristics of IXYS' HiPerFETTM power MOSFETs, including international standard packages, low gate charge and capacitance, and low RDS(on).

IXFH/IXFT is a N-channel enhancement mode MOSFET device released by IXYS, with a rated voltage of 500V and a rated current of 40A. It features low gate charge and capacitance, easy to drive, fast switching. The device adopts international standard package, low RDS(on), rated for unclamped inductive load switching (UIS) and mold epoxies meet UL 94 V-0 flammability classification.

This data sheet lists the characteristic values of HiPerFETTM Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Low Gate Charge and Capacitances.

This document introduces the HiPerFETTM power MOSFET series from IXYS. These products are N-channel enhancement mode high dv/dt, low trr, HDMOSTM family. The features include international standard packages, low RDS(on), rugged polysilicon gate cell structure, unclamped inductive switching (UIS) rated, low package inductance - easy to drive and protect, fast intrinsic rectifier, etc. They are suitable for applications such as DC-DC converters, synchronous rectification, battery chargers, switched-mode and resonant-mode power supplies, DC choppers, etc.