IXYS Manuals

419 MCC 72 MCD 72 is a bidirectional controllable thyristor switch produced by IXYS company. It has an international standard package JEDEC TO-240 AA, direct copper bonded Al2O3 - ceramic base plate, planar passivated chips, isolation voltage 3600 V~, UL registered, E 72873, gate-cathode twin pins, etc. It can be applied to DC motor control, soft start AC motor controller, lighting, heat and temperature control.

This document is the datasheet of MCC 95-08io1B from IXYS. It contains parameters such as maximum current, maximum voltage, maximum current stress and maximum voltage stress.

26N90 and 25N90 are MOSFET products from IXYS company, featuring low RDS(on), high power density, easy to mount, etc. They are used in DC-DC converters, battery chargers, switch-mode and resonant-mode power supplies, DC choppers, temperature and lighting control.

The document describes the features and characteristics of a low VCE(sat) IGBT with diode and high-speed IGBT with diode combination package produced by IXYS.

The document introduces the features and characteristics of a notebook computer of a certain brand and model.

IXTH 14N80 is an N-channel enhancement type power MOSFET with a maximum voltage of 800V and a maximum current of 14A. It has a fast switching time and is used in switch-mode power supplies, inverters, UPSs and other power electronic applications.

IXTH 12 N50A is a N-channel enhancement mode power MOSFET from IXYS with a maximum voltage of 500V, maximum current of 12A and maximum on resistance of 0.4 ohms.

This datasheet provides information on the maximum ratings, characteristics, packages, pinout, applications, and advantages of IXTH/IXTM 10N100 and IXTH/IXTM 12N100.

This is the datasheet of IXYS's 10P50 and 11P50 standard power MOSFET devices. The device has international standard packages, low RDS(on) HDMOSTM process, rugged polysilicon gate cell structure, unclamped inductive switching (UIS) rated, low package inductance, easy to drive and protect.

This document describes the features and characteristics of the MegaMOSTMFET N-Channel Enhancement Mode products produced by IXYS Corporation, including international standard packages, low RDS (on), HDMOSTM process, rugged polysilicon gate cell structure, and low package inductance.

This document describes the features and characteristics of a power MOSFET product produced by IXYS, including high power dissipation, isolated mounting surface, and 2500V electrical isolation.

This document introduces the features and characteristics of PolarHTTM Power MOSFET N-Channel Enhancement Mode, including international standard packages, unclamped inductive switching (UIS) rated, and low package inductance.

5N50P is a N-channel enhancement mode MOSFET produced by IXYS. Its features are international standard packages, unclamped inductive switching (UIS) rated, low package inductance, easy to drive and protect, and easy to install, space saving and high power density.

IXTA/IXTP 3N120 and 3N110 are high voltage power MOSFETs from IXYS. They have international standard packages, low RDS(on), unclamped Inductive load Switching (UIS) rated values and UL 94 V-0 flammability classification advantages.

IXTA is a high voltage MOSFET produced by IXYS company. It has the characteristics of low RDS(on), high reliability and low package inductance. It is suitable for applications such as switch-mode power supplies and inverters.