IXYS Manuals

This document introduces the high current power MOSFET products from IXYS. The features of the products include international standard package, 3000V isolation voltage, low RDS (on), rugged polysilicon gate cell structure, low drain-to-case capacitance, and low package inductance. The products are suitable for various applications.

IXTH 12N90 is a TO-247 packaged N-channel enhancement mode MOSFET with a maximum voltage of 900V and a maximum current of 12A. It has a fast switching time and is suitable for applications such as switch-mode power supplies and inverters.

This document is the datasheet of IXTQ 110N055P, which mainly introduces the maximum voltage, rated current, drain current, gate-source voltage, drain-source voltage, gate-source current, and drain-source resistance of the product.

This document describes the features and characteristics of the N-Channel Enhancement Mode power MOSFET product produced by IXYS in 2005, including international standard packages, unclamped inductive switching (UIS) rating, and low package inductance. The product is easy to mount, saves space, and has high power density.

This document describes the features and characteristics of the N-Channel Enhancement Mode MOSFET products produced by IXYS, including high voltage, low RDS(on), rugged polysilicon gate cell structure, and fast switching times. The product is suitable for applications such as switch-mode and resonant-mode power supplies, flyback inverters, DC choppers, and high frequency matching.

IXTA is a high voltage MOSFET produced by IXYS company. It has the characteristics of low RDS(on), high reliability and low package inductance. It is suitable for applications such as switch-mode power supplies and inverters.

IXTA/IXTP 3N120 and 3N110 are high voltage power MOSFETs from IXYS. They have international standard packages, low RDS(on), unclamped Inductive load Switching (UIS) rated values and UL 94 V-0 flammability classification advantages.

5N50P is a N-channel enhancement mode MOSFET produced by IXYS. Its features are international standard packages, unclamped inductive switching (UIS) rated, low package inductance, easy to drive and protect, and easy to install, space saving and high power density.

This document introduces the features and characteristics of PolarHTTM Power MOSFET N-Channel Enhancement Mode, including international standard packages, unclamped inductive switching (UIS) rated, and low package inductance.

This document describes the features and characteristics of a power MOSFET product produced by IXYS, including high power dissipation, isolated mounting surface, and 2500V electrical isolation.

This document describes the features and characteristics of the MegaMOSTMFET N-Channel Enhancement Mode products produced by IXYS Corporation, including international standard packages, low RDS (on), HDMOSTM process, rugged polysilicon gate cell structure, and low package inductance.

This is the datasheet of IXYS's 10P50 and 11P50 standard power MOSFET devices. The device has international standard packages, low RDS(on) HDMOSTM process, rugged polysilicon gate cell structure, unclamped inductive switching (UIS) rated, low package inductance, easy to drive and protect.

This datasheet provides information on the maximum ratings, characteristics, packages, pinout, applications, and advantages of IXTH/IXTM 10N100 and IXTH/IXTM 12N100.

IXTH 12 N50A is a N-channel enhancement mode power MOSFET from IXYS with a maximum voltage of 500V, maximum current of 12A and maximum on resistance of 0.4 ohms.