IXYS Manuals

IXFH 7 N80 and IXFM 7 N80 are N-channel enhancement mode power MOSFETs from IXYS with high dv/dt, low trr and high power density. They are suitable for DC-DC converters, synchronous rectifiers, battery chargers, switched-mode power supplies and other applications.

This document describes the features and characteristics of IXYS Corporation's products, including international standard packaging, low RDS(on), and high voltage performance.

The document describes the HiPerFETTM power MOSFETs of IXYS company, including the PLUS 247TM (IXFX) and TO-264 AA (IXFK) models. These products feature low Qg, high dV/dt, and low trr.

This document is the Datasheet of IXYS's 25N80/27N80 MOSFET, which mainly introduces the characteristics and features of the MOSFET, application scenarios and advantages.

This document is the datasheet of IXFK 26N60Q IX N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Power MOSFETs. Its main features include low gate charge, international standard packages, epoxy meet UL 94 V-0, flammability classification, low RDS (on) HDMOSTM process, rugged polysilicon gate cell structure, avalanche energy and current rated, fast intrinsic Rectifier etc.

PLUS 247TM is a single MOSFET die with low Qg, low trr and high-frequency switching performance. Applications include DC-DC converters, battery chargers, and switched-mode power supplies.

This document describes the features and characteristics of the HiPerFETTM Power MOSFETs Q-Class N-Channel Enhancement Mode products produced by IXYS in 2004. These features include low gate resistance, international standard packages, UL 94 V-0 flammability classification, etc. In addition, the product has advantages such as avalanche energy and current rating, and fast intrinsic rectifier.

IXFK33N50 / IXFK35N50 MOSFET is a high performance power device produced by IXYS. It adopts international standard package, and has the characteristics of low RDS(on), high power density and easy to install.

This document is the datasheet of the N-Channel Power MOSFET of IXFX brand PLUS 247TM.

IXGH 10 N100U1 is a combination of IGBT and Schottky diode produced by IXYS company. Its package is TO-247 AD, with a maximum voltage of 1000V and a maximum current of 20A. The typical on-state voltage drop is 3.5V.

The document describes the features and characteristics of IXYS products, including international standard package JEDEC TO-247 AD, integrated IGBT and anti-parallel FRED, 2nd generation HDMOSTM process, low VCE(sat), MOS gate turn-on, fast recovery epitaxial diode FRED, etc. It is suitable for AC motor speed control, DC servo and robot drives, DC choppers, uninterruptible power supplies (UPS), switch-mode and resonant-mode power supplies.

HiPerFASTTM IGBT is a medium frequency IGBT produced by IXYS. It has a new generation HDMOSTM process, international standard package JEDEC TO-247, high peak current handling capability, and is suitable for PFC circuits, AC motor speed control, DC servo and robot drives, switch-mode and resonant-mode power supplies.

IXGH 12N is a high-frequency IGBT produced by IXYS. Its maximum voltage is 600V and its maximum current is 24A. The typical switching time is 55ns. This product has the characteristics of high frequency, high power density, high peak current handling capability, and is suitable for applications such as PFC circuit, AC motor speed control, DC servo and robot drives, switch-mode and resonant-mode power supplies, and high power audio amplifiers.

This document describes the features and characteristics of IXYS products, including high current handling capability, simplicity of MOS gate turn-on drive, rugged NPT structure, etc. It is suitable for applications such as capacitor discharge and pulser circuits, AC motor speed control, DC servo and robot drives, DC choppers, uninterruptible power supplies (UPS), switched-mode and resonant-mode power supplies.